Haibing Peng

US Patent:

7466069, Dec 16, 2008

Filed:

Oct 29, 2003

Appl. No.:

10/696462

Inventors:

Jene A. Golovchenko - Lexington MA, US
Haibing Peng - Cambridge MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01J 1/88
H01J 1/02
C23C 16/00

US Classification:

313257, 257E5104, 4272491, 313238, 313311

Abstract:

A carbon nanotube device in accordance with the invention includes a support structure including an aperture extending from a front surface to a back surface of the structure. At least one carbon nanotube extends across the aperture and is accessible through the aperture from both the front surface and the back surface of the support structure.

US Patent:

7969079, Jun 28, 2011

Filed:

Nov 5, 2008

Appl. No.:

12/290977

Inventors:

Jene A. Golovchenko - Lexington MA, US
Haibing Peng - Houston TX, US
Daniel Branton - Lexington MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01J 1/88

US Classification:

313257, 257E5104, 313238, 313311

Abstract:

A carbon nanotube device in accordance with the invention includes a free-standing membrane that is peripherally supported by a support structure. The membrane includes an aperture that extends through a thickness of the membrane. At least one carbon nanotube extends across the aperture on a front surface of the membrane. The carbon nanotube is also accessible from a back surface of the membrane.

US Patent:

8120448, Feb 21, 2012

Filed:

Oct 19, 2007

Appl. No.:

12/446231

Inventors:

Haibing Peng - Houston TX, US
Alexander K. Zettl - Kensington TX, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H03H 9/24
H03B 5/30

US Classification:

333186, 333200, 331154, 331156, 977742, 977748, 977847, 977932

Abstract:

A tunable nanostructure such as a nanotube is used to make an electromechanical oscillator. The mechanically oscillating nanotube can be provided with inertial clamps in the form of metal beads. The metal beads serve to clamp the nanotube so that the fundamental resonance frequency is in the microwave range, i. e. , greater than at least 1 GHz, and up to 4 GHz and beyond. An electric current can be run through the nanotube to cause the metal beads to move along the nanotube and changing the length of the intervening nanotube segments. The oscillator can operate at ambient temperature and in air without significant loss of resonance quality. The nanotube is can be fabricated in a semiconductor style process and the device can be provided with source, drain, and gate electrodes, which may be connected to appropriate circuitry for driving and measuring the oscillation. Novel driving and measuring circuits are also disclosed.

US Patent:

20060006377, Jan 12, 2006

Filed:

Jun 6, 2005

Appl. No.:

11/145650

Inventors:

Jene Golovchenko - Lexington MA, US
Haibing Peng - Albany CA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 29/06

US Classification:

257039000

Abstract:

The invention provides a carbon nanotube field effect transistor including a nanotube having a length suspended between source and drain electrodes. A gate dielectric material coaxially coats the suspended nanotube length and at least a portion of the source and drain electrodes. A gate metal layer coaxially coats the gate dielectric material along the suspended nanotube length and overlaps a portion of the source and drain electrodes, and is separated from those electrode portions by the gate dielectric material. The nanotube field effect transistor is fabricated by coating substantially the full suspended nanotube length and a portion of the source and drain electrodes with a gate dielectric material. Then the gate dielectric material along the suspended nanotube length and at least a portion of the gate dielectric material on the source and drain electrodes are coated with a gate metal layer.

US Patent:

20130018599, Jan 17, 2013

Filed:

Jul 12, 2012

Appl. No.:

13/547450

Inventors:

Haibing Peng - Houston TX, US

International Classification:

H01L 29/66
G06F 17/18
H01L 21/20
G01N 27/04
B82Y 99/00
B82Y 40/00

US Classification:

702 30, 257 9, 438478, 324691, 257E29166, 257E2109, 977734

Abstract:

A graphene nano-sensor with a suspended graphene flake electrically connected to metal electrodes. The graphene nano-sensor is capable of detecting single molecules in an atmosphere through a change in electrical conductance through the graphene flake.

US Patent:

20190206888, Jul 4, 2019

Filed:

Dec 30, 2017

Appl. No.:

15/859499

Inventors:

Haibing Peng - Houston TX, US

International Classification:

H01L 27/11568
H01L 29/78
H01L 29/417
H01L 29/51
H01L 29/792
H01L 29/788
H01L 29/66
H01L 21/28
H01L 27/11521

Abstract:

The present invention provides architectures of high-density NOR flash memory consisting of arrays of memory cells (i.e., field effect transistors) with uniquely designed sidewall charge-storage structures to solve the leakage problem typically associated with overerase in traditional NOR flash memory. This feature is particularly useful for applications such as embedded flash memory.

US Patent:

20160118404, Apr 28, 2016

Filed:

Oct 6, 2015

Appl. No.:

14/875744

Inventors:

Haibing Peng - Houston TX, US

International Classification:

H01L 27/115
H01L 29/78
H01L 29/16
H01L 29/51

Abstract:

The present invention provides a design of three-dimensional non-volatile ferroelectric random access memory (FeRAM) devices for increasing the storage density. The key components include: (1) FeRAM device structures with (i) field-effect-transistors electrically connected either in series or in parallel as a basic memory group and (ii) a double-gate structure for implementing read/write schemes with full random access to individual memory cells, where one type of gates employs ferroelectrics layers as the gate dielectrics while the other type of gates employs conventional dielectric materials as the gate dielectrics; and (2) FeRAM device structures with stacked ferroelectric-capacitors and field-effect-transistors electrically connected in series as a basic NAND memory group. Example fabrication processes for implementing such three-dimensional FeRAM devices are also provided.