Earl Vedere Atnip - Plano TX, US Mark Andrew Franklin - Plano TX, US Gregory Dean Winterton - Flower Mound TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G02B 26/08 B05D 5/06
US Classification:
359224, 427162
Abstract:
In accordance with one embodiment of the present disclosure, a method for filling a void of an electromechanical system includes forming a void within a support layer. A conductive layer is formed outwardly from the support layer such that a portion of the conductive layer partially fills the void. A remainder of the void is filled with an inorganic material. A mirror is formed outwardly from the inorganic material and the conductive layer.
Double Wafer Carrier Process For Creating Integrated Circuit Die With Through-Silicon Vias And Micro-Electro-Mechanical Systems Protected By A Hermetic Cavity Created At The Wafer Level
Thomas Dyer BONIFIELD - Dallas TX, US Thomas W. WINTER - McKinney TX, US William R. MORRISON - Dallas TX, US Gregory D. WINTERTON - Flower Mound TX, US Asad M. HAIDER - Plano TX, US
Assignee:
TEXAS INSTRUMENTS INCORPORATED - Dallas TX
International Classification:
H01L 21/50
US Classification:
438118, 257E21499
Abstract:
A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.