Abstract:
A method and apparatus for amplifying signals is disclosed. In one embodiment, the apparatus comprises a first MOSFET having a drain, a source and a gate. The apparatus further comprises a second MOSFET having a drain, a source and a gate. The second MOSFET is a depletion mode device having a substantially greater drain saturation current than the first MOSFET. The drain of the first MOSFET is connected to the source of the second MOSFET through a first conductor, and the source of the first MOSFET is connected to the gate of the second MOSFET through a second conductor. Finally, the apparatus further comprises a conductor for connecting the drain of the second MOSFET to biasing source to apply sufficient voltage to cause saturation of the first and second MOSFETs.