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Geza Myrna B Csanky

Deceased

from Manhattan Beach, CA

Also known as:
  • Geza Myrna Csanky
  • Geza C Csanky
  • Geza M Csanky
  • Myran B Csanky
  • Geza M Sanky
  • Yeza Csanky
  • Zanky C Geza
Phone and address:
1405 Harkness St, Manhattan Beach, CA 90266
310 372-2405

Geza Csanky Phones & Addresses

  • 1405 Harkness St, Manhattan Bch, CA 90266 • 310 372-2405
  • Manhattan Beach, CA
  • 27412 Rondell St, Agoura Hills, CA 91301
  • Los Angeles, CA
  • Hawthorne, CA
  • El Segundo, CA
  • Nine Mile Falls, WA
  • Redondo Beach, CA
  • 1405 Harkness St, Manhattan Beach, CA 90266 • 760 578-5314

Work

  • Position:
    Retired

Us Patents

  • Liquid Crystal Devices Having Uniform Thermal Expansion Coefficient Components

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  • US Patent:
    42563828, Mar 17, 1981
  • Filed:
    May 3, 1979
  • Appl. No.:
    6/035679
  • Inventors:
    Michael A. Piliavin - Encino CA
    Geza Csanky - Sepulveda CA
  • Assignee:
    Hughes Aircraft Company - Culver City CA
  • International Classification:
    G02F 1133
  • US Classification:
    350334
  • Abstract:
    A liquid crystal cell for use in a display and a method for manufacturing such display is disclosed. Each cell of such display includes a membrane which is manufactured by conventional semiconductor processing technology. Such membrane has semiconductor structural support members between which liquid crystal fluid is retained. Such membrane and residual liquid crystal fluid in the cell have substantially the same thermal coefficient of expansion as a silicon integrated circuit chip attached to the rib members. The membrane prevents warpage and deterioration of each liquid crystal cell, maintains uniformity of spacing between structural members of the cell, and enables a high quality cell to be fabricated with accompanying improved cell fabrication yield.
  • Current Mode Transistor Circuit Method

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  • US Patent:
    58894314, Mar 30, 1999
  • Filed:
    Jun 26, 1997
  • Appl. No.:
    8/883223
  • Inventors:
    Geza Csanky - Manhattan Beach CA
  • Assignee:
    The Aerospace Corporation - El Segundo CA
  • International Classification:
    G05F 110
  • US Classification:
    327543
  • Abstract:
    A method controls the load currents of current mirror loads of logic circuits, for lowering power dissipation at high frequency clock rates while providing stable output signal logic levels insensitive to operating conditions such as varying external radiation well suited for CMOS circuit operation. The method enables segmented control of logic circuits for powering up operational circuits while powering down dormant circuits for efficient power utilization.
  • Current Mode Transistor Circuit

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  • US Patent:
    58894306, Mar 30, 1999
  • Filed:
    Jun 26, 1997
  • Appl. No.:
    8/883222
  • Inventors:
    Geza Csanky - Manhattan Beach CA
  • Assignee:
    The Aerospace Corporation - El Segundo CA
  • International Classification:
    G05F 110
  • US Classification:
    327543
  • Abstract:
    A current mirror includes a reference transistor connected between the current source and current transistor and receives a reference voltage level and for providing a mirror voltage to a mirror transistor providing a current load to a driver connected to the mirror transistor of the current mirror for operating a logic circuit in a static current mode offering lower power dissipation at high frequency clock rates and for providing stable output signal logic levels insensitive to operating conditions such as varying external radiation well suited for CMOS circuit operation.
  • Method And Apparatus For Amplifying Signals

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  • US Patent:
    48209996, Apr 11, 1989
  • Filed:
    Sep 11, 1987
  • Appl. No.:
    7/096563
  • Inventors:
    Geza Csanky - Manhattan Beach CA
  • Assignee:
    The Aerospace Corporation - El Segundo CA
  • International Classification:
    H03F 316
  • US Classification:
    330277
  • Abstract:
    A method and apparatus for amplifying signals is disclosed. In one embodiment, the apparatus comprises a first MOSFET having a drain, a source and a gate. The apparatus further comprises a second MOSFET having a drain, a source and a gate. The second MOSFET is a depletion mode device having a substantially greater drain saturation current than the first MOSFET. The drain of the first MOSFET is connected to the source of the second MOSFET through a first conductor, and the source of the first MOSFET is connected to the gate of the second MOSFET through a second conductor. Finally, the apparatus further comprises a conductor for connecting the drain of the second MOSFET to biasing source to apply sufficient voltage to cause saturation of the first and second MOSFETs.

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