Frederick O Simpson

Author:

Frederick Arthur Simpson

ISBN #:

0837181534

US Patent:

49486624, Aug 14, 1990

Filed:

Apr 7, 1986

Appl. No.:

6/848539

Inventors:

Frederick H. Simpson - Seattle WA
Juris Verzemnieks - Tacoma WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

D04H 158
B32B 900

US Classification:

428288

Abstract:

Oxide-based ceramic fibers are treated in a novel process to create a substantially uniform boron nitride barrier coating at their surface. The process involves heating the fibers in a nitriding atmosphere at between about 2200-2600. degree. F. to create a BN coating at the surface of the fiber from boron initially within the fiber.

US Patent:

46055886, Aug 12, 1986

Filed:

Mar 14, 1985

Appl. No.:

6/711898

Inventors:

Frederick H. Simpson - Seattle WA
Juris Verzemnieks - Tacoma WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

D04H 158
B32B 900

US Classification:

428288

Abstract:

Oxide-based ceramic fibers are treated in a novel process to create a substantially uniform boron nitride barrier coating at their surface. The process includes the step of heating the fiber, preferably an aluminoborosilicate fiber like NEXTEL, for between about 5-90 minutes in a nitriding atmosphere of ammonia, hydrogen and nitrogen at a temperature of between about 2200. degree. -2600. degree. F. to diffuse boron from the fiber to the surface of the fiber where it reacts to form the boron nitride coating.

US Patent:

43882552, Jun 14, 1983

Filed:

Mar 27, 1981

Appl. No.:

6/248498

Inventors:

Frederick H. Simpson - Seattle WA

Assignee:

Boeing Aerospace Co. (A Division of the Boeing Company) - Seattle WA

International Classification:

C01B 2106

US Classification:

264 291

Abstract:

Method for producing. alpha. -silicon nitride whiskers. Silicon is blended with composition particles able to sublime without leaving a residue, such as naphthalene particles. The blend is compacted to a desired shape, after which the composition particles are sublimed from the blend to form a porous silicon precursor compact having the desired shape. The silicon precursor is reacted with a substance that releases free nitrogen, such as nitrogen or dry ammonia. The reaction is carried out at a temperature sufficiently high to form an identically shaped porous compact of. alpha. -silicon nitride whiskers but sufficiently low to avoid subliming substantially all of the formed whiskers. Preferably, the reaction is carried out in a range between about 2100. degree. F. and 2750. degree. F. The shaped porous compact of. alpha.

US Patent:

46774432, Jun 30, 1987

Filed:

Feb 2, 1981

Appl. No.:

6/230372

Inventors:

Edward L. Koetje - Seattle WA
Frederick H. Simpson - Seattle WA
James F. Schorsch - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01Q 142

US Classification:

343872

Abstract:

A broadband high temperature radome includes a high density outer skin layer and a low density core layer made from a ceramic material selected from the group consisting of silicon nitride and barium-aluminum silicate. Silicon nitride is sintered, reaction-sintered or chemically vapor-deposited. The outer skin has a moderate dielectric constant of about 5. 0 and the core layer has a low dielectric constant of about 1. 8. Both dielectric constants do not sigificantly vary at temperatures up to 1500. degree. C. Low thermal expansion of the core and skin layers are matched by the thermal expansion of a base connector constructed in a laminated form of graphite/polyimide. The thickness of the core layer to the thickness of the skin layer is given by the ratio of about 15:1 where the skin layer thickness is about 0. 030 inch. Polyimide resin is used for the high temperature adhesive to adhere the connector to the core and skin layers. The core layer is impregnated with a dielectric filler, if desired.