Leo B. Baldwin - Beaverton OR Frank G. Evans - Dundee OR
Assignee:
Electro Scientific Industries, Inc. - Portland OR
International Classification:
G01B 1124
US Classification:
356609, 356620, 356401
Abstract:
A calibration system within an optical inspection apparatus comprising a sensor, lens, fiducials, and a CPU. The CPU is configured to receive information from the sensor relating to the fiducial coordinate system and the sensor coordinate system, and the fiducials are used to determine a physical relationship between the sensor coordinates and fiducial coordinates. The calibration system has a means for calibrating the inspection system and measuring critical dimensions of an object in an accurate manner on-the-fly without additional set-up or manual calibration of the system.
Automatic Separation Of Subject Pixels Using Segmentation Based On Multiple Planes Of Measurement Data
A method and apparatus for characterizing pixels in an image of an object surface by providing at least two images of the surface wherein each pixel has a unique location common to all of the images; comparing each pixel value at each location to an identification matrix; and identifying the region in which each pixel is located based on the comparison. The matrix can comprise a plurality of non-pixel values representing one or more regions, each of the regions defining at least one surface attribute. One embodiment provides at least two references images of a template using the same technique used to obtain each image of the surface, and creating the matrix using the reference images. Providing at least two images comprises providing a first and second image, wherein the surface is illuminated using a first and second source of illumination, or providing the first using a source of illumination and providing the second from the first.
Semiconductor Structure Processing Using Multiple Laser Beam Spots Spaced On-Axis With Cross-Axis Offset
Kelly J. Bruland - Portland OR, US Brian W. Baird - Oregon City OR, US Ho Wai Lo - Portland OR, US Stephen N. Swaringen - Rockwall TX, US Frank G. Evans - Dundee OR, US
Assignee:
Electro Scientific Industries, Inc. - Portland OR
International Classification:
H01L 21/82
US Classification:
438130, 438 13, 21912168
Abstract:
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
Semiconductor Structure Processing Using Multiple Laser Beam Spots
Kelly J. Bruland - Portland OR, US Brian W. Baird - Oregon City OR, US Ho Wai Lo - Portland OR, US Stephen N. Swaringen - Rockwall TX, US Frank G. Evans - Dundee OR, US
Assignee:
Electro Scientific Industries, Inc. - Portland OR
International Classification:
H01L 21/00 B23K 26/00
US Classification:
438132, 21912176
Abstract:
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
Semiconductor Structure Processing Using Multiple Laser Beam Spots Spaced On-Axis On Non-Adjacent Structures
Kelly J. Bruland - Portland OR, US Brian W. Baird - Oregon City OR, US Ho Wai Lo - Portland OR, US Frank G. Evans - Dundee OR, US
Assignee:
Electro Scientific Industries, Inc. - Portland OR
International Classification:
B23K 26/08 B23K 26/38
US Classification:
2504922, 25049222, 21912168, 21912169
Abstract:
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
Kelly J. Bruland - Portland OR, US Brian W. Baird - Oregon City OR, US Ho Wai Lo - Portland OR, US Stephen N. Swaringen - Rockwall TX, US Frank G. Evans - Dundee OR, US
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.
Non-Oriented Optical Character Recognition Of A Wafer Mark
Frank Evans - Dundee OR, US Fulton Li - Beaverton OR, US
International Classification:
G06K009/00 G06K009/18
US Classification:
382/141000, 382/182000
Abstract:
A non-oriented optical character recognition device and method for locating and reading identification markings on silicon wafers positioned in any orientation without having to physically manipulate the silicon wafer.
Leo Baldwin - Portland OR, US Frank Evans - Dundee OR, US
International Classification:
G01N021/88
US Classification:
356/237200
Abstract:
The present invention provides a light source which improves the lighting for objects which include a nontrivial bi-directional reflectance distribution function and a nominal illumination angle. A two dimensional light source is positioned at an angle which is complementary to the nominal illumination angle such that the object is illuminated at its nominal illumination angle.
Dr. Evans graduated from the Oklahoma State University Center for Health Sciences College of Osteopathic Medicine in 1994. He works in Stillwater, OK and specializes in Family Medicine. Dr. Evans is affiliated with Stillwater Medical Center.
"I've been ruled by Westminster governments for too long," said Frank Evans, a 62-year-old in Glasgow at a "Yes" rally filled with flags -- including one celebrating a famous Scottish victory over the English at the Battle of Bannockburn in the Wars of Independence in 1314.