Frank C Chien

US Patent:

46095683, Sep 2, 1986

Filed:

Jul 27, 1984

Appl. No.:

6/634936

Inventors:

Yun Bai Koh - Sunnyvale CA
Frank Chien - Los Altos CA
Madhu Vora - Los Gatos CA

Assignee:

Fairchild Camera & Instrument Corporation - Mountain View CA

International Classification:

H01L 2120

US Classification:

427 85

Abstract:

A process for fabricating self-aligned regions of metal silicide on bipolar integrated circuits having self-aligned polycrystalline silicon emitters and base contacts includes the steps of depositing a layer of polycrystalline silicon across the surface of the structure, patterning the polycrystalline silicon to define the emitters and base contacts as well as resistors and diodes, heating the structure to transfer desired conductivity dopants from the polycrystalline silicon into the underlying structure, forming a protective layer over those regions of the structure where metal silicide is not desired, depositing a layer of refractory metal across the entire structure, and reacting the refractory metal with the underlying silicon to form metal silicide.