Evgeni P Gousev

US Patent:

6346487, Feb 12, 2002

Filed:

Mar 10, 2001

Appl. No.:

09/803503

Inventors:

Douglas A. Buchanan - Cortlandt Manor NY
Evgeni P. Gousev - Mahopac NY
Carol J. Heenan - LaGrangeville NY
Wade J. Hodge - Bolton VT
Steven M. Shank - Jericho VT
Patrick R. Varekamp - Croton on Hudson NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2131

US Classification:

438774, 438769, 438770, 438773

Abstract:

An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200Â C. , and preferably 950Â C. In a second embodiment, distributed N O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.

US Patent:

6395650, May 28, 2002

Filed:

Oct 23, 2000

Appl. No.:

09/694173

Inventors:

Alessandro Cesare Callegari - Yorktown Heights NY
Fuad Elias Doany - Katonah NY
Evgeni Petrovich Gousev - Mahopac NY
Theodore Harold Zabel - Yorktown Heights NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2131

US Classification:

438785, 438771, 438795

Abstract:

Within: (1) a method for purifying a metal oxide layer; and (2) a method for forming with enhanced purity a metal oxide layer, there is employed an irradiation of either: (1) a metal oxide layer; or (2) a substrate in the presence of at least one of an oxidant and a metal source material, such as to either: (1) reduce a concentration of a contaminant material within a metal oxide base material from which is formed a metal oxide layer; or (2) inhibit in a first instance formation of a contaminant material within a metal oxide layer. The metal oxide layer having incorporated therein the reduced concentration of contaminant material is particularly useful as a capacitive dielectric layer within a capacitive device within a microelectronic fabrication.

US Patent:

6436196, Aug 20, 2002

Filed:

Jun 22, 2001

Appl. No.:

09/887505

Inventors:

Douglas A. Buchanan - Cortlandt Manor NY
Evgeni P. Gousev - Yorktown Heights NY
Carol J. Heenan - LaGrangeville NY
Wade J. Hodge - Bolton VT
Steven M. Shank - Jericho VT
Patrick R. Varekamp - Croton on Hudson NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2131

US Classification:

118725, 118715, 118719, 438773, 438774

Abstract:

An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200Â C. , and preferably 950Â C. In a second embodiment, distributed N O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.

US Patent:

6444592, Sep 3, 2002

Filed:

Jun 20, 2000

Appl. No.:

09/597765

Inventors:

Arne W. Ballantine - Round Lake NY
Douglas A. Buchanan - Cortlandt Manor NY
Eduard A. Cartier - New York NY
Kevin K. Chan - Staten Island NY
Matthew W. Copel - Yorktown Heights NY
Christopher P. DEmic - Ossining NY
Evgeni P. Gousev - Mahopac NY
Fenton Read McFeely - Ossining NY
Joseph S. Newbury - Tarrytown NY
Patrick R. Varekamp - Croton-on-Hudson NY
Theodore H. Zabel - Yorktown Heights NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21469

US Classification:

438770

Abstract:

A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide, oxynitride and/or nitride layer on a device region of a semiconductor substrate, said interfacial layer having a thickness of less than 10 ; and (b) forming a high-k dielectric material on said interfacial oxide, oxynitride and/or, nitride layer, said high-k dielectric having a dielectric constant, k, of greater than 8.

US Patent:

6511873, Jan 28, 2003

Filed:

Jun 15, 2001

Appl. No.:

09/882749

Inventors:

Arne W. Ballantine - Round Lake NY
Douglas A. Buchanan - Cortlandt Manor NY
Eduard A. Cartier - Leuven, BE
Douglas D. Coolbaugh - Essex Junction VT
Evgeni P. Gousev - Mahopac NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

438239, 438392, 438253, 257296, 257300

Abstract:

Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.

US Patent:

6573197, Jun 3, 2003

Filed:

Apr 12, 2001

Appl. No.:

09/833550

Inventors:

Alessandro C. Callegari - Yorktown Heights NY
Evgeni Gousev - Mahopac NY
Michael A. Gribelyuk - Poughquag NY
Paul C. Jamison - Hopewell Junction NY
Dianne L. Lacey - Mahopac NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2131

US Classification:

438791, 438200, 438592, 438287, 438778, 438488, 438591, 257411, 257406, 257349, 257649

Abstract:

The present invention provides a method of fabricating a thermally stable polysilicon/high-k dielectric film stack utilizing a deposition method wherein Si-containing precursor gas which includes silicon and hydrogen is diluted with an inert gas such as He so as to significantly reduce the hydrogen content in the resultant polysilicon film. Semiconductor structures such as field effect transistors (FETs) and capacitors which include at least the thermally stable polysilicon/high-k dielectric film stack are also provided herein.

US Patent:

6642156, Nov 4, 2003

Filed:

Aug 1, 2001

Appl. No.:

09/919970

Inventors:

Evgeni Gousev - Mahopac NY
Atul C. Ajmera - Wappingers Falls NY
Christopher P. DEmic - Ossining NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21469

US Classification:

438786, 438787, 438788, 438791

Abstract:

A method for forming an ultra thin gate dielectric for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes forming an initial nitride layer upon a substrate by rapidly heating the substrate in the presence of an ammonia (NH ) gas, and then re-oxidizing the initial nitride layer by rapidly heating the initial nitride layer in the presence of a nitric oxide (NO) gas, thereby forming an oxynitride layer. The oxynitride layer has a nitrogen concentration therein of at about 1. 0Ã10 atoms/cm to about 6. 0Ã10 atoms/cm , and has a thickness which may be controlled within a sub 10 range.

US Patent:

6887797, May 3, 2005

Filed:

Jul 19, 2002

Appl. No.:

10/199542

Inventors:

Douglas A. Buchanan - Cortlandt Manor NY, US
Evgeni P. Gousev - Mahopac NY, US
Carol J. Heenan - LaGrangeville NY, US
Wade J. Hodge - Bolton VT, US
Steven M. Shank - Jericho VT, US
Patrick R. Varekamp - Croton on Hudson NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/31
H01L021/469

US Classification:

438773, 438774, 438775

Abstract:

An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200 C. , and preferably 950 C. In a second embodiment, distributed NO gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.