Eric M Verret

US Patent:

20080111155, May 15, 2008

Filed:

Nov 14, 2006

Appl. No.:

11/559633

Inventors:

Cristiano Capasso - Austin TX, US
Srikanth B. Samavedam - Austin TX, US
Eric J. Verret - Austin TX, US

Assignee:

FREESCALE SEMICONDUCTOR, INC. - Austin TX

International Classification:

H01L 27/088
H01L 21/77

US Classification:

257192, 438199, 257E2706, 257E21598

Abstract:

An electronic device includes an n-channel transistor and a p-channel transistor. The p-channel transistor has a first gate electrode with a first work function and a first channel region including a semiconductor layer immediately adjacent to a semiconductor substrate. In one embodiment, the first work function is less than the valence band of the semiconductor layer. In another embodiment, the n-channel transistor has a second gate electrode with a second work function different from the first work function and closer to a conduction band than a valence band of a second channel region. A process of forming the electronic device includes forming first and second gate electrodes having first and second work functions, respectively. First and second channel regions having a same minority carrier type are associated with the first and second gate electrodes, respectively.