Eric O Levenson

US Patent:

6599438, Jul 29, 2003

Filed:

Mar 30, 2001

Appl. No.:

09/823354

Inventors:

Eric O. Levenson - Los Altos CA
Ahmad Waleh - Palo Alto CA

Assignee:

Anon, Inc. - Los Altos CA

International Classification:

H01L 213065

US Classification:

216 67, 438725

Abstract:

Ashing of an organic film from a substrate is carried out by providing a plasma comprising a gas or gas mixture selected from the following groups: (a) sulfur trioxide alone; (2) sulfur trioxide plus one supplemental gas; and (3) sulfur trioxide plus at least two supplemental gases. Any of the following gases may be employed as the supplemental gas: oxygen, ozone, hydrogen, nitrogen, nitrogen oxides, helium, argon, or neon. Also, a process is provided for forming a plasma in a reaction chamber from reactant gases containing sulfur trioxide. The process includes introducing the sulfur trioxide into the reaction chamber from a storage vessel through a delivery manifold by independently heating the storage vessel and the delivery manifold to a temperature sufficient to maintain the sulfur trioxide in its gaseous state or liquid state and by heating the reaction chamber to control the reaction rate of the sulfur trioxide and also control condensation of the sulfur trioxide to maintain a stable plasma state.

US Patent:

8066819, Nov 29, 2011

Filed:

Feb 24, 2004

Appl. No.:

10/786280

Inventors:

Ahmad Waleh - Palo Alto CA, US
Eric O. Levenson - Los Altos CA, US

Assignee:

Best Label Co., Inc. - Cerritos CA

International Classification:

B08B 7/04
B08B 7/00
B08B 3/00

US Classification:

134 30, 134 13, 134 34, 134 38

Abstract:

Water-free, gaseous sulfur trioxide is used as an agent to remove various organic coatings, films, layers and residues from the surface of a substrate when used in conjunction with certain other physical and chemical treatments applied at the appropriate time during the process.

US Patent:

57630160, Jun 9, 1998

Filed:

Dec 19, 1996

Appl. No.:

8/771392

Inventors:

Eric O. Levenson - Los Altos CA
Ahmad Waleh - Palo Alto CA

Assignee:

Anon, Incorporated - San Jose CA

International Classification:

C08J 704

US Classification:

427510

Abstract:

Water-free, gaseous sulfur trioxide is used as an agent to form patterns in organic coatings, films, and layers, including photoresists, by etching areas exposed to the agent through an overlying mask or by developing a latent image of the desired pattern using the agent as a dry-developer.

US Patent:

6231775, May 15, 2001

Filed:

Sep 28, 1999

Appl. No.:

9/407014

Inventors:

Eric O. Levenson - Los Altos CA
Ahmad Waleh - Palo Alto CA

Assignee:

Anon, Inc. - San Jose CA

International Classification:

H01L 213065

US Classification:

216 67

Abstract:

Ashing of an organic film from a substrate is carried out by providing a plasma comprising a gas or gas mixture selected from the following groups: (a) sulfur trioxide alone; (2) sulfur trioxide plus one supplemental gas; and (3) sulfur trioxide plus at least two supplemental gases. Any of the following gases may be employed as the supplemental gas: oxygen, ozone, hydrogen, nitrogen, nitrogen oxides, helium, argon, or neon. Also, a process is provided for forming a plasma in a reaction chamber from reactant gases containing sulfur trioxide. The process includes introducing the sulfur trioxide into the reaction chamber from a storage vessel through a delivery manifold by independently heating the storage vessel and the delivery manifold to a temperature sufficient to maintain the sulfur trioxide in its gaseous state or liquid state and by heating the reaction chamber to control the reaction rate of the sulfur trioxide and also control condensation of the sulfur trioxide to maintain a stable plasma state.