A pinning process including the steps of gold-plating through-holes in a laminate carrier and crimping old or gold-plated pin located in the through-holes to form a pin head on the top and a pin bulge on the bottom of the laminate carrier to produce a plastic pin grid array. A variety of mechanical forming processes may be employed to form the pin heads and pin bulges and cause the pin to at least partially, and preferably substantially, fill and contact the gold-plated through-hole including swage pinning, impact pinning, and double-die pinning operations. By combining the steps of gold-plating through-holes of a laminate carrier and using a mechanical pinning process to crimp a gold or gold-plated pin in the through-holes, a reliable mechanical and electrical connection may be established between the pin and the metal lines both inside and on the surface of the laminate carrier without the need for lead-containing solders and pastes.
Interconnection For Flip-Chip Using Lead-Free Solders And Having Improved Reaction Barrier Layers
Luc Belanger - Granby, CA Stephen L. Buchwalter - Hopewell Junction NY, US Leena Paivikki Buchwalter - Hopewell Junction NY, US Ajay P. Giri - Poughkeepsie NY, US Jonathan H. Griffith - Lagrangeville NY, US Donald W. Henderson - Ithaca NY, US Sung Kwon Kang - Chappaqua NY, US Eric H. Laine - Binghamton NY, US Christian Lavoie - Pleasantville NY, US Paul A. Lauro - Brewster NY, US Valérie Anne Oberson - St-Alphonse de Granby, CA Da-Yuan Shih - Poughkeepsie NY, US Kamalesh K Srivastava - Wappingers Falls NY, US Michael J. Sullivan - Red Hook NY, US
Assignee:
International Business Machines Corporation - Armonk NY
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Interconnections For Flip-Chip Using Lead-Free Solders And Having Improved Reaction Barrier Layers
Luc Belanger - Granby, CA Stephen L. Buchwalter - Hopewell Junction NY, US Leena Paivikki Buchwalter - Hopewell Junction NY, US Ajay P. Giri - Poughkeepsie NY, US Jonathan H. Griffith - Lagrangeville NY, US Donald W. Henderson - Ithaca NY, US Sung Kwon Kang - Chappaqua NY, US Eric H. Laine - Binghamton NY, US Christian Lavoie - Pleasantville NY, US Paul A. Lauro - Brewster NY, US Valérie Anne Oberson - St-Alphonse de Granby, CA Da-Yuan Shih - Poughkeepsie NY, US Kamalesh K Srivastava - Wappingers Falls NY, US Michael J. Sullivan - Red Hook NY, US
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Eric P. Dibble - Endicott NY Eric H. Laine - Binghamton NY Stephen W. MacQuarrie - Vestal NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23532
US Classification:
257697
Abstract:
A pinning process including the steps of gold-plating through-holes in a laminate carrier and crimping a gold or gold-plated pin located in the through-holes to form a pin head on the top and a pin bulge on the bottom of the laminate carrier to produce a plastic pin grid array. A variety of mechanical forming processes may be employed to form the pin heads and pin bulges and cause the pin to at least partially, and preferably substantially, fill and contact the gold-plated through-hole including swage pinning, impact pinning, and double-die pinning operations. By combining the steps of gold-plating through-holes of a laminate carrier and using a mechanical pinning process to crimp a gold or gold-plated pin in the through-holes, a reliable mechanical and electrical connection may be established between the pin and the metal lines both inside and on the surface of the laminate carrier without the need for lead-containing solders and pastes.
Eric Herman Laine - Binghamton NY James Warren Wilson - Vestal NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2314 H01L 2348 H01L 2352 H05K 118
US Classification:
257702
Abstract:
An electronic package which includes a thermally conductive, e. g. , copper, member having a thin layer of dielectric material, e. g. , polyimide, on at least one surface thereof. On the polyimide is provided the desired high density circuit pattern which is electrically connected, e. g. , using solder or wirebonds, to the respective contact sites of a semiconductor chip. If wirebonds are used, the copper member preferably includes an indentation therein and the chip is secured, e. g. , using adhesive, within this indentation. If solder is used to couple the chip, a plurality of small diameter solder elements are connected to respective contact sites of the chip and to respective ones of the pads and/or lines of the provided circuit pattern. Significantly, the pattern possesses lines and/or pads in one portion which are of high density and lines and/or pads in another portion which are of lesser density. The chip is coupled to the higher density portion of the circuitry which then may "fan out" to the lesser (and larger) density lines and/or pads of the other portion of the circuitry.
Eric H. Laine - Binghamton NY James W. Wilson - Vestal NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2334 H01L 23495 H01L 2348
US Classification:
257717
Abstract:
An electronic package which includes a thermally conductive, e. g. , copper, member having a thin layer of dielectric material, e. g. , polyimide, on at least one surface thereof. On the polyimide is provided the desired high density circuit pattern which is electrically connected, e. g. , using solder or wirebonds, to the respective contact sites of a semiconductor chip. If wirebonds are used, the copper member preferably includes an indentation therein and the chip is secured, e. g. , using adhesive, within this indentation. If solder is used to couple the chip, a plurality of small diameter solder elements are connected to respective contact sites of the chip and to respective ones of the pads and/or lines of the provided circuit pattern. Significantly, the pattern possesses lines and/or pads in one portion which are of high density and lines and/or pads in another portion which are of lesser density. The chip is coupled to the higher density portion of the circuitry which then may "fan out" to the lesser (and larger) density lines and/or pads of the other portion of the circuitry.
Eric Herman Laine - Binghamton NY James Warren Wilson - Vestal NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2334 H01L 23495 H01L 2348
US Classification:
257702
Abstract:
An electronic package which includes a thermally conductive, e. g. , copper, member having a thin layer of dielectric material, e. g. , polyimide, on at least one surface thereof. On the polyimide is provided the desired high density circuit pattern which is electrically connected, e. g. , using solder or wirebonds, to the respective contact sites of a semiconductor chip. If wirebonds are used, the copper member preferably includes an indentation therein and the chip is secured, e. g. , using adhesive, within this indentation. If solder is used to couple the chip, a plurality of small diameter solder elements are connected to respective contact sites of the chip and to respective ones of the pads and/or lines of the provided circuit pattern. Significantly, the pattern possesses lines and/or pads in one portion which are of high density and lines and/or pads in another portion which are of lesser density. The chip is coupled to the higher density portion of the circuitry which then may "fan out" to the lesser (and larger) density lines and/or pads of the other portion of the circuitry.
Eric Herman Laine - Binghamton NY James Warren Wilson - Vestal NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2160 H01L 2144
US Classification:
438122
Abstract:
An electronic package which includes a thermally conductive, e. g. , copper, member having a thin layer of dielectric material, e. g. , polyimide, on at least one surface thereof. On the polyimide is provided the desired high density circuit pattern which is electrically connected, e. g. , using solder or wirebonds, to the respective contact sites of a semiconductor chip. If wirebonds are used, the copper member preferably includes an indentation therein and the chip is secured, e. g. , using adhesive, within this indentation. If solder is used to couple the chip, a plurality of small diameter solder elements are connected to respective contact sites of the chip and to respective ones of the pads and/or lines of the provided circuit pattern. Significantly, the pattern possesses lines and/or pads in one portion which are of high density and lines and/or pads in another portion which are of lesser density. The chip is coupled to the higher density portion of the circuitry which then may "fan out" to the lesser (and larger) density lines and/or pads of the other portion of the circuitry.
Landlord & Tenant Insurance Defense Subrogation Civil Litigation Legal Malpractice Personal Injury Construction Law Criminal Defense Alternative Dispute Resolution
Suss Microtec 2006 - 2007
C4Np Technology Specialist
Bae Systems 2006 - 2007
Senior Principal Hardware Engineer at Bae Systems
Ibm 1982 - 2005
Senior Engineering Manager
Education:
Binghamton University 1983 - 1991
Master of Science, Masters
Michigan Technological University 1978 - 1982
Bachelors, Bachelor of Science, Chemical Engineering
Skills:
Engineering Management Electronics Manufacturing Engineering Failure Analysis Semiconductors Product Development Program Management Design of Experiments Process Engineering Spc Engineering Aerospace Manufacturing Design For Manufacturing Six Sigma R&D Component Engineering Kaizen Fmea Earned Value Management Iso Technology Development Cost Reduction
Eric Laine 1989 graduate of Redlands High School in Redlands, CA is on Memory Lane. Get caught up with Eric and other high school alumni from Redlands High