Emil J Mehalchick from 185 Laning Creek Rd, Towanda, PA 18848, Phone: 570 265-7932

Method For Enhancing The Crystallization Rate Of High Purity Amorphous Si.sub.3 N.sub.2 Powder By Intimate Contact With A Titanium Containing Material
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US Patent:

42082153, Jun 17, 1980
Filed:

Sep 18, 1978
Appl. No.:

5/943032
Inventors:

Richard N. Kleiner - Towanda PA
Emil J. Mehalchick - Towanda PA
Assignee:

GTE Service Corporation - Stamford CT
International Classification:

C04B 3558
US Classification:

106 733
Abstract:

High purity, fine Si. sub. 3 N. sub. 4 powder produced by the vapor phase reaction of SiCl. sub. 4 with NH. sub. 3 is amorphous. The crystallization rate of the amorphous powder is enhanced by heating the powder while in intimate contact with a titanium containing material, for example, TiN codeposited with the Si. sub. 3 N. sub. 4 by the simultaneous reaction of TiCl. sub. 4 with NH. sub. 3.

Method For Enhancing The Crystallization Rate Of High Purity Amorphous Si.sub.3 N.sub.4 Powder, Powders Produced Thereby And Products Therefrom
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US Patent:

41452240, Mar 20, 1979
Filed:

Nov 22, 1974
Appl. No.:

5/526257
Inventors:

Emil J. Mehalchick - Towanda PA
Richard N. Kleiner - Towanda PA
Assignee:

GTE Sylvania Incorporated - Stamford CT
International Classification:

C04B 3558
US Classification:

106 733
Abstract:

High purity, fine Si. sub. 3 N. sub. 4 powder produced by the vapor phase reaction of SiCl. sub. 4 with NH. sub. 3 is amorphous. The crystallization rate of the amorphous powder is enhanced by heating the powder while in intimate contact with a titanium containing material, for example, TiN codeposited with the Si. sub. 3 N. sub. 4 by the simultaneous reaction of TiCl. sub. 4 with NH. sub. 3.

Emil J Mehalchick