Elizabeth Ann Stewart

US Patent:

47373075, Apr 12, 1988

Filed:

Jul 23, 1987

Appl. No.:

7/076781

Inventors:

Robert L. Brown - Irving TX
Elizabeth C. Stewart - Houston TX

International Classification:

C11D 348

US Classification:

252106

Abstract:

A cleansing composition capable of removing smegma comprises in an aqueous solution a cleansing agent comprising a mixture of surface active agents in the indicated amounts as follows: (i) from a trace to 0. 2% by weight, based on the total weight of said composition, as an active material of cetylpyridinium chloride, (ii) from a trace to not more than 20 ppm chlorine dioxide, plus 20 ppm sodium hypochlorite, (iii) from a trace to 1% by weight, based on the total weight of said composition as an active material, of polyoxyethylene (20) sorbitan monostearate, and (iv) sodium benzoate from a trace to 2%.

US Patent:

46922628, Sep 8, 1987

Filed:

Sep 18, 1986

Appl. No.:

6/908697

Inventors:

Robert L. Brown - Irving TX
Elizabeth C. Stewart - Houston TX

International Classification:

C11D 348

US Classification:

252106

Abstract:

A cleansing composition capable of removing smegma comprises in an aqueous solution a cleansing agent comprising a mixture of surface active agents in the indicated amounts as follows: (i) from a trace to 0. 2% by weight, based on the total weight of said composition, as an active material of cetylpyridinium chloride, (ii) from a trace to not more than 20 ppm chlorine dioxide, (iii) from a trace to 1% by weight, based on the total weight of said composition as an active material, of polyoxyethylene (20) sorbitan monosterate, and (iv) sodium lauryl sulfate from a trace to 2%.

US Patent:

20230056046, Feb 23, 2023

Filed:

Feb 28, 2022

Appl. No.:

17/682762

Inventors:

- Dallas TX, US
Elizabeth Costner Stewart - Dallas TX, US
Jeffrey Alan West - Dallas TX, US
Thomas Dyer Bonifield - Dallas TX, US

International Classification:

H01L 23/522
H01L 23/528
H01L 21/768

Abstract:

An electronic device has a conductive shield between first and second regions in a multilevel metallization structure, as well as a capacitor with first and second terminals in the first region, the first terminal laterally overlaps the second terminal by an overlap distance of 1.0 μm to 6.0 μm, the conductive shield includes a first metal line that encircles the first terminal, and the first metal line is spaced apart from the first terminal by a gap distance of 0.5 μm to 1.0 μm.

US Patent:

20210367044, Nov 25, 2021

Filed:

Aug 10, 2021

Appl. No.:

17/398279

Inventors:

- Dallas TX, US
ELIZABETH COSTNER STEWART - DALLAS TX, US

International Classification:

H01L 29/40
H01L 29/78
H01L 21/308
H01L 29/66
H01L 29/06

Abstract:

An integrated circuit (IC) includes a field-plated transistor including a substrate having a semiconductor surface layer, at least one body region in the semiconductor surface layer, and at least a first trench isolation region adjacent to the body region having at least a first tapered sidewall that has an average angle along its full length of 15 to 70 degrees. A gate is over the body region. A field plate is over the first tapered trench isolation region. A source is on one side of the field plate and a drain is on an opposite side of the field plate. The IC also includes circuitry for realizing at least one circuit function having a plurality of transistors which are configured together with the field-plated transistor that utilize second trench isolation regions for isolation that have an average angle of 75 and 90 degrees.

US Patent:

20200258987, Aug 13, 2020

Filed:

Feb 8, 2019

Appl. No.:

16/270729

Inventors:

- Dallas TX, US
ELIZABETH COSTNER STEWART - DALLAS TX, US

International Classification:

H01L 29/40
H01L 29/78
H01L 29/06
H01L 29/66
H01L 21/308

Abstract:

An integrated circuit (IC) includes a field-plated transistor including a substrate having a semiconductor surface layer, at least one body region in the semiconductor surface layer, and at least a first trench isolation region adjacent to the body region having at least a first tapered sidewall that has an average angle along its full length of 15 to 70 degrees. A gate is over the body region. A field plate is over the first tapered trench isolation region. A source is on one side of the field plate and a drain is on an opposite side of the field plate. The IC also includes circuitry for realizing at least one circuit function having a plurality of transistors which are configured together with the field-plated transistor that utilize second trench isolation regions for isolation that have an average angle of 75 and 90 degrees.

US Patent:

20160300693, Oct 13, 2016

Filed:

Apr 9, 2015

Appl. No.:

14/682651

Inventors:

- Dallas TX, US
Elizabeth Costner Stewart - Dallas TX, US
Nicholas S. Dellas - Dallas TX, US

International Classification:

H01J 37/32
H03H 3/02

Abstract:

A method of fabricating a sloped termination of a molybdenum layer includes providing the molybdenum layer and applying a photo resist material to the molybdenum layer. The photo resist material is exposed under a defocus condition to generate a resist mask having an edge portion. The molybdenum layer is etched at least at the edge portion of the resist mask to result in a sloped termination of the molybdenum layer.