Elizabeth Ann Apen

US Patent:

7915166, Mar 29, 2011

Filed:

Feb 22, 2007

Appl. No.:

11/710652

Inventors:

Yongsik Yu - Lake Oswego OR, US
Pramod Subramonium - Tigard OR, US
Zhiyuan Fang - West Linn OR, US
Jon Henri - West Linn OR, US
Elizabeth Apen - West Linn OR, US
Dan Vitkavage - Tualatin OR, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438687, 438628, 438763, 438791, 438780, 257E2117, 257E21171, 257E21576

Abstract:

Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e. g. , high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

US Patent:

8124522, Feb 28, 2012

Filed:

Apr 11, 2008

Appl. No.:

12/082496

Inventors:

Hui-Jung Wu - Fremont CA, US
Kimberly Shafi - Boise ID, US
Kaushik Chattopadhyay - San Jose ID, US
Keith Fox - Portland OR, US
Tom Mountsier - San Jose CA, US
Girish Dixit - San Jose CA, US
Bart van Schravendijk - Sunnyvale CA, US
Elizabeth Apen - West Linn OR, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 23/532
H01L 21/768

US Classification:

438618, 438378, 438795, 438796, 438797, 438687

Abstract:

Provided are methods of stabilizing an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer. Methods include modulating the optical properties reduces the effects of UV radiation on the dielectric diffusion barrier layer. The dielectric diffusion barrier can be made to absorb less UV radiation. A dielectric layer with UV absorbing properties may also be added on top of the diffusion barrier layer so less UV is transmitted. Both methods result in reduced interaction between UV radiation and the dielectric diffusion barrier.

US Patent:

61465410, Nov 14, 2000

Filed:

May 2, 1997

Appl. No.:

8/848849

Inventors:

Laurie A. Goldstein - Scottsdale AZ
Timothy J. Warfield - Gilbert AZ
Jane K. Gates - Chandler AZ
Elizabeth Apen - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 21302

US Classification:

216 2

Abstract:

A semiconductor wafer (11) having a dielectric layer (12) is used as a calibration standard (10) to calibrate thickness measuring equipment in a wafer processing or manufacturing area. The thickness of the dielectric layer (12) is maintained to a desired thickness by heating the calibration standard (10) to remove contaminants from the dielectric layer (12).