Edward C Laskowski

US Patent:

6925232, Aug 2, 2005

Filed:

May 30, 2003

Appl. No.:

10/448711

Inventors:

Edward John Laskowski - Short Hills NJ, US
Christi Kay Madsen - South Plainfield NJ, US
Annjoe Golangco Wong-Foy - Basking Ridge NJ, US

Assignee:

Lucent Technologies, Inc. - Murray Hill NJ

International Classification:

G02B006/26
G02B006/10

US Classification:

385 39, 385129

Abstract:

In accordance with the invention, a high speed thermo-optic phase shifter comprises a length of optical waveguide including a waveguiding core of a first material having an index of refraction nand a first order temperature dependence |dn/dT| and, optically coupled to the core, a length of a second material having an index npreferably greater than the core (n>n) and a first order temperature dependence |dn/dT| than the core (|dn/dT|>|dn/dT|). Advantageously, the length of second material is adiabatically tapered at both ends. Upon heating, as by a resistance heater, the second material changes the optical pathlength by an amount predominantly determined by |dn/dT| providing faster switching speed. In a preferred embodiment, the core comprises silica, and the second material comprises silicon to produce switching speeds up to a few hundred MHz.

US Patent:

54061946, Apr 11, 1995

Filed:

Sep 21, 1992

Appl. No.:

7/948059

Inventors:

Douglas R. Dykaar - Gillette NJ
Ulrich D. Keil - Warren NJ
Rose F. Kopf - Greenbrook NJ
Edward J. Laskowski - Scotch Plains NJ
George J. Zydzik - Columbia NJ

Assignee:

AT&T Corp. - Murray Hill NJ

International Classification:

G01R 3100

US Classification:

324 96

Abstract:

A new electro-optic sampling probe with femtosecond resolution suitable for ultra-fast electro-optic sampling. The new probe is several times thinner and has a dielectric constant four times less than the best reported conventional bulk LiTaO. sub. 3 probes. In addition, the ultimate bandwidth is 50 percent greater than an equivalent LiTaO. sub. 3 probe. The probe is a thin film of Al. sub. x Ga. sub. 1-x As used in both total internally reflecting and free-standing geometries. Here x is chosen for sufficient transmission of the crystal to the wavelength of the laser source being used for electro-optic sampling. The thickness of the film is a small fraction of the thickness of prior art probes and is chosen, for speed and sensitivity of electro-optic sampling, to be thin compared to the spatial extent of the laser pulse. The thin film probe eliminates many of the problems associated with the use of bulk crystals as electro-optic sensors.

US Patent:

61155209, Sep 5, 2000

Filed:

Mar 5, 1998

Appl. No.:

9/035317

Inventors:

Edward John Laskowski - Scotch Plains NJ
Dirk Joachim Muehlner - Berkely Heights NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

G02B 626
G01B 902

US Classification:

385 50

Abstract:

The present invention includes a MZI comprising a pair of folded waveguides disposed between a pair of couplers. Each folded waveguide comprises a pair of segments intersecting at a reflector. The respective reflectors are different distances from the couplers to provide a major portion of the differential path length between the two arms. In a preferred embodiment, the reflectors are polysilicon mirrors and can be formed by etching through the intersecting waveguides and depositing polysilicon. The result is a compact MZI that can be used as a multiwavelength reference for a laser light source on a common silicon optical bench chip.

US Patent:

60028238, Dec 14, 1999

Filed:

Aug 5, 1998

Appl. No.:

9/129522

Inventors:

Edwin Arthur Chandross - Murray Hill NJ
Arturo Hale - New York NY
Valerie Jeanne Kuck - Upper Montclair NJ
Edward John Laskowski - Scotch Plains NJ
Christi Kay Madsen - South Plainfield NJ
Ronald Edward Scotti - White House Station NJ
Joseph Shmulovich - Murray Hill NJ

Assignee:

Lucent Techolonogies Inc. - Murray Hill NJ

International Classification:

G02B 626

US Classification:

385 50

Abstract:

The thermo-optically controlled optical couplers wherein the coupling region between the waveguides in the coupling section is filled with a material having a high dependence of refractive index on temperature thus making the thermo-optic control means more efficient and allowing a greater range of adjustment in the coupling coefficient for a given temperature change.

US Patent:

55771416, Nov 19, 1996

Filed:

Mar 10, 1995

Appl. No.:

8/402266

Inventors:

Renen Adar - Haifa, IL
Edward J. Laskowski - Scotch Plains NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

G02B 600
G02B 636

US Classification:

385 43

Abstract:

The invention relates to a fixed gap waveguide taper. The waveguide taper has a first end and a second end for being coupled to a fiber. The waveguide taper includes a plurality of segments extending from the first end toward the second end. The segments include a gap portion and a core portion. In the present invention, the gap portion remains fixed at a constant length s throughout the entire waveguide taper. In contrast, the core section of the segment varies from the waveguide end of the taper toward the fiber end of the taper. In particular, the core section in each of the segments progressively decreases in length from the waveguide end toward the fiber end of the taper. Accordingly, the length of the segment. LAMBDA. progressively decreases from the waveguide end toward the fiber end of the taper.

US Patent:

51107651, May 5, 1992

Filed:

Nov 30, 1990

Appl. No.:

7/621700

Inventors:

Jaya Bilakanti - Mahwah NJ
Edward J. Laskowski - Scotch Plains NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21302

US Classification:

437225

Abstract:

A solution of H. sub. 2 O. sub. 2 and EDTA selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. Illustratively, Al. sub. y Ga. sub. 1-y As (y. ltoreq. 0) is selectively etched in the presence of Al. sub. x Ga. sub. 1-x As(x>y), and InGaAs is selectively etched in the presence of either InAlAs or InP.

US Patent:

46134174, Sep 23, 1986

Filed:

Dec 28, 1984

Appl. No.:

6/687129

Inventors:

Edward J. Laskowski - Scotch Plains NJ
Catherine Wolowodiuk - Chatham Township, Morris County NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

C25F 312

US Classification:

20412985

Abstract:

A photoelectrochemical etching process is described for n-type and semi-insulating III-V semiconductor compounds that contain aluminum or indium (AlGaAs, InGaAs) in which a non-aqueous electrolyte is used. High etch rates are achieved without harm to exposed metallization or p-layers. An exemplatory application is the separation of chips (e. g. , LED chips) after wafer processing.

US Patent:

49235648, May 8, 1990

Filed:

Aug 24, 1989

Appl. No.:

7/398116

Inventors:

Jaya Bilakanti - Teaneck NJ
Edward J. Laskowski - Scotch Plains NJ

Assignee:

American Telephone and Telegraph Company - New York NY

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

156655

Abstract:

An etching process is described for etching aluminum containing III-V semiconductor compounds. The etch solution contains dichromate ion in acid aqueous solution in which the acid is either phosphoric acid or sulfuric acid. The etch solution is highly selective in that it etches the aluminum containing III-V semiconductor compounds without etching significantly other III-V semiconductor compounds not containing aluminum exposed to the same etching solution. the etching process is extremely useful in fabricating a variety of III-V semiconductor devices including heterojunction bipolar transistors, heterojunction field effect transistors and self-enhanced electro optic devices.