Dibakar D Das

US Patent:

20100258528, Oct 14, 2010

Filed:

Apr 13, 2009

Appl. No.:

12/422771

Inventors:

RAJIV K. SINGH - GAINESVILLE FL, US
ARUL CHAKKARAVARTHI ARJUNAN - GAINESVILLE FL, US
DIBAKAR DAS - GAINESVILLE FL, US
DEEPIKA SINGH - GAINESVILLE FL, US
TANJORE V. JAYARAMAN - GAINESVILLE FL, US

Assignee:

SINMAT, INC. - GAINESVILLE FL
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC. - GAINESVILLE FL

International Classification:

B24B 1/00
B24B 7/22
C09K 13/00

US Classification:

216 53, 451 36, 252 791

Abstract:

Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of eth silicon carbide surface is removed.

US Patent:

20120070991, Mar 22, 2012

Filed:

Nov 28, 2011

Appl. No.:

13/305479

Inventors:

RAJIV K. SINGH - GAINESVILLE FL, US
ARUL Chakkaravarthi ARJUNAN - GAINESVILLE FL, US
DIBAKAR DAS - GAINESVILLE FL, US
DEEPIKA SINGH - GAINESVILLE FL, US
TANJORE V. JAYARAMAN - GAINESVILLE FL, US

Assignee:

UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC. - GAINESVILLE FL
SINMAT, INC. - GAINESVILLE FL

International Classification:

H01L 21/306

US Classification:

438693, 257E2123

Abstract:

Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.