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Deeder M Aurongzeb

age ~50

from Austin, TX

Also known as:
  • Beeder Aurongzeb
  • Deeder B
Phone and address:
2632 Century Park Blvd UNIT 71, Austin, TX 78727

Deeder Aurongzeb Phones & Addresses

  • 2632 Century Park Blvd UNIT 71, Austin, TX 78727
  • Round Rock, TX
  • Burtonsville, MD
  • Kansas City, MO
  • 6805 Mayfield Rd, Cleveland, OH 44124 • 440 461-1019
  • Lubbock, TX
  • Travis, TX

Resumes

Deeder Aurongzeb Photo 1

Johns Hopkins Whiting School Of Engineering

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Work:
Dell Feb 2015 - Feb 2017
Staff Reliability Engineer

Feb 2015 - Feb 2017
Johns Hopkins Whiting School of Engineering
Deeder Aurongzeb Photo 2

Director Of Intelligent Devices

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Work:

Director of Intelligent Devices
Deeder Aurongzeb Photo 3

Distinguished Engineer And Director-Innovation

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Location:
Austin, TX
Industry:
Electrical/Electronic Manufacturing
Work:
Dell Technologies
Distinguished Engineer and Director-Innovation

Dell Oct 2013 - Oct 2015
Director of Reliability: Chief Technology Officer Office

Dell Apr 2013 - Aug 2014
Technical Staff- Special Projects: Chief Technology Officer Office

Ge Jan 2010 - Mar 2013
Director-Ge Intelligent Devices

Ge Global Research Jan 2009 - Jan 2010
Staff Scientist
Skills:
Materials Science
Materials
Semiconductors
Testing
R&D
Manufacturing
Six Sigma
Engineering Management
Physics
Product Development
Failure Analysis
Cross Functional Team Leadership
Spc
Engineering
Nanotechnology
Quality Management
Problem Solving
Modeling
Systems Engineering
Characterization
Technological Innovation
Innovation Management
Software Quality Assurance
Sensors
Machine Learning
Reliability
Cloud Storage
Optics
Research
Process Development
Team Building
Team Leadership
Storage Virtualization
Process Simulation
R&R
Research and Development
Statistical Process Control
Design Research
Data Visualization
Organizational Development

Us Patents

  • Quartz Metal Halide Lamp With Improved Structural And Electrical Properties

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  • US Patent:
    7629749, Dec 8, 2009
  • Filed:
    Nov 13, 2006
  • Appl. No.:
    11/598532
  • Inventors:
    Deeder Aurongzeb - Mayfield Heights OH, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J 17/20
    H01J 7/24
    H01J 61/82
  • US Classification:
    313623, 313541, 313637, 439615
  • Abstract:
    The invention relates to a discharge lamp having and envelope and at least one pair of inner leads and at least one pair of outer leads corresponding thereto, at least one end of each lead disposed in the interior of the lamp, with a substantially planar foil between any one pair of inner and outer leads, and a connector provided between any one lead and the foil, the connector having at least one planar contact surface for connecting the lead to the foil and increasing the contact surface area and providing means for dissipating excess heat and energy that enters the lamp.
  • Inhibited Oxidation Foil Connector For A Lamp

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  • US Patent:
    7719194, May 18, 2010
  • Filed:
    May 12, 2006
  • Appl. No.:
    11/433108
  • Inventors:
    Deeder M. Aurongzeb - Mayfield Heights OH, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J 17/04
    H01J 61/04
  • US Classification:
    313633, 313285, 31331802, 313331, 313332, 313623
  • Abstract:
    A foil connector () suited for use in a lamp () is provided. The foil connector includes a substrate layer () formed from an electrically conductive material. A coating () is provided for reducing oxidation of the substrate during lamp operation. The coating includes a first coating layer () on the substrate comprising a noble metal, a second coating layer () spaced from the substrate by the first coating layer, the second coating layer comprising a noble metal, and optionally, a third coating layer () spaced from the substrate by the first and second coating layers, the third coating layer comprising a noble metal.
  • Highly Emissive Material, Structure Made From Highly Emissive Material, And Method Of Making The Same

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  • US Patent:
    7768207, Aug 3, 2010
  • Filed:
    Oct 12, 2007
  • Appl. No.:
    11/871657
  • Inventors:
    Gary R. Allen - Chesterland OH, US
    Deeder Aurongzeb - Mayfield Heights OH, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J 17/16
  • US Classification:
    313635, 313493
  • Abstract:
    The invention relates to a high temperature material modified to exhibit enhanced IR emittance in the wavelength range where a black body operating at the same high temperature exhibits peak emittance, to a light-transmissive body comprising the high temperature material, to a high intensity lamp comprising the high temperature material, and to a method of preparing the same.
  • Wavelength Filtering Coating For High Temperature Lamps

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  • US Patent:
    7772749, Aug 10, 2010
  • Filed:
    May 1, 2007
  • Appl. No.:
    11/799430
  • Inventors:
    Deeder Aurongzeb - Mayfield Heights OH, US
    Philip Ellis - Willoughby OH, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J 43/00
  • US Classification:
    313112
  • Abstract:
    The invention relates to a discharge lamp having a thin film indium oxide coating on the interior lamp envelope surface that effectively reflects UV, near IR and microwave radiation while transmitting light in the visible spectrum, the lamp being a high temperature operating lamp.
  • High Temperature Photonic Structure For Tungsten Filament

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  • US Patent:
    7781977, Aug 24, 2010
  • Filed:
    Dec 20, 2006
  • Appl. No.:
    11/642193
  • Inventors:
    Deeder M. Aurongzeb - Mayfield Heights OH, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J 17/04
  • US Classification:
    313633, 313331
  • Abstract:
    The invention is directed to a process for the creation of a photonic lattice on the surface of an emissive substrate comprising first depositing a thin film metal layer on at least one surface of the substrate, the thin film metal comprising a metal having a melting point lower than the melting point of the substrate, then annealing the thin film metal layer and the substrate to create nano-particles on the substrate surface, and anodizing or plasma etching the annealed thin film metal and substrate to create pores in the nano-particles and the substrate such that upon exposure to high temperature the emissivity of the substrate is refocused to generate emissions in the visible and lower infrared region and to substantially eliminate higher infrared emission, and to the substrate thus created.
  • Highly Emissive Cavity For Discharge Lamp And Method And Material Relating Thereto

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  • US Patent:
    7786660, Aug 31, 2010
  • Filed:
    Feb 6, 2007
  • Appl. No.:
    11/702919
  • Inventors:
    Deeder Aurongzeb - Mayfield Heights OH, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J 19/14
    H01J 63/04
    H01J 17/06
    H01J 61/04
    C25D 11/04
  • US Classification:
    313491, 313339, 313618, 313632, 205324, 445 50
  • Abstract:
    The invention relates to an electrode having a nano-hollow array on the surface thereof, the nano-hollow array comprising a plurality of nano-pores or nano-balls, each pore having a diameter of less than 500 nm, formed by a process comprising depositing a uniform metal film on the electrode structure surface at a rate of 2 Å per second or less, annealing the metal film under rapid anneal conditions at a temperature within about 100 degrees of the melting point of the metal film and without subjecting the metal film to a temperature ramp-up to create metal droplets, and anodizing and over-anodizing the metal droplets in the presence of an anodization agent for the metal at from 20 to 200 volts at 0. 1 to 2 amps to create nano-pores in the metal droplets or nano-balls to, creating increased surface area and increased electric field around the electrode which enhances speed of fill gas ionization.
  • Coil/Foil-Electrode Assembly To Sustain High Operating Temperature And Reduce Shaling

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  • US Patent:
    7863818, Jan 4, 2011
  • Filed:
    Aug 1, 2007
  • Appl. No.:
    11/832230
  • Inventors:
    Deeder M Aurongzeb - Mayfield Heights OH, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J 17/04
    H01J 61/04
  • US Classification:
    313633, 313623, 313541, 313637
  • Abstract:
    The invention relates to a barrier layer provided on the electrode assembly of a discharge lamp comprising at least a layer of nanoclusters of a non-oxidizing material. Further, the invention relates to an electrode assembly for a discharge lamp comprising an electrode having a foil attached thereto to create an electrode assembly, the assembly being coated with a multi-layer coating comprising at least a layer of non-oxidizing material in the form of nanoclusters, and at least another layer of non-oxidizing material, such that the total coating thickness is up to 1500 nm. A method to reduce thermal expansion mismatch between an electrode assembly and a discharge lamp envelope is also provided, the method comprising providing an electrode assembly and depositing on the surface of the assembly a coating having at least a nanocluster layer of a non-oxidizing material, and subsequently subjecting the lamp envelope in the electrode assembly area to pinching to create a pinch area, this lamp being able to operate at elevated temperature for extended periods, in excess of 1000 hours.
  • Organic Light Emitting Device

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  • US Patent:
    7868536, Jan 11, 2011
  • Filed:
    Oct 27, 2008
  • Appl. No.:
    12/258833
  • Inventors:
    Deeder Aurongzeb - Mayfield Heights OH, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01L 51/50
    H01L 51/52
    H01L 51/56
  • US Classification:
    313503, 313504, 313506, 445 24
  • Abstract:
    An organic light emitting device including an anode including a lanthanide oxide. The lanthanide oxide is doped with a conductive material including rubidium, titanium, or combinations thereof. The organic light emitting device further includes a cathode, an organic hole transport layer intermediate the anode and cathode, and an electron injection layer intermediate the anode and cathode.
Name / Title
Company / Classification
Phones & Addresses
Deeder Aurongzeb
Managing
DATATOPOS, LLC
5217 Old Spicewood Spg Rd APT 509, Austin, TX 78731

Youtube

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