Daniel A Steckert

US Patent:

7344975, Mar 18, 2008

Filed:

Aug 26, 2005

Appl. No.:

11/213283

Inventors:

Gurtej S. Sandhu - Boise ID, US
Max F. Hineman - Sunnyvale CA, US
Daniel A. Steckert - Boise ID, US
Jingyi Bai - San Jose CA, US
Shane J. Trapp - Boise ID, US
Tony Schrock - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/4763

US Classification:

438637, 438709, 438906, 257E21585

Abstract:

A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

US Patent:

7985692, Jul 26, 2011

Filed:

Jan 23, 2008

Appl. No.:

12/018254

Inventors:

Gurtej S. Sandhu - Boise ID, US
Max F. Hineman - Sunnyvale CA, US
Daniel A. Steckert - Boise ID, US
Jingyi Bai - San Jose CA, US
Shane J. Trapp - Boise ID, US
Tony Schrock - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/302

US Classification:

438717, 438639, 438706, 438725

Abstract:

A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

US Patent:

20060043536, Mar 2, 2006

Filed:

Aug 31, 2004

Appl. No.:

10/931655

Inventors:

Chih-Chen Co - Hsinchu, TW
Daniel Steckert - Boise ID, US

International Classification:

H01L 23/58
H01L 21/461

US Classification:

257632000, 438725000, 438780000

Abstract:

A method for forming a semiconductor device comprises forming a layer to be etched, and forming a patterned photoresist layer over the layer to be etched. The patterned photoresist layer is treated prior to etching, for example by implantation with argon or nitrogen. This treatment reduces the volume of the photoresist, possibly by densifying the layer, which results in the photoresist layer being more resistant to an etch and decreasing the size of the feature to be formed. After treating the photoresist layer, the layer to be etched is exposed to an etchant.

US Patent:

20110250759, Oct 13, 2011

Filed:

Jun 21, 2011

Appl. No.:

13/164970

Inventors:

Gurtej S. Sandhu - Boise ID, US
Max F. Hineman - Boise ID, US
Daniel A. Steckert - Boise ID, US
Jingyi Bai - Boise ID, US
Shane J. Trapp - Boise ID, US
Tony Schrock - Boise ID, US

Assignee:

MICRON TECHNOLOGY, INC. - Boise ID

International Classification:

H01L 21/3065

US Classification:

438710, 257E21218

Abstract:

A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.