Cyrus Afghahi - Mission Viejo CA Sami Issa - Phoenix AZ Zeynep Toros - Irvine CA
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 11401
US Classification:
365149, 365 63, 365 72
Abstract:
A random access memory cell ( ) includes a first conductor line ( ) and a second conductor line ( ). A native device ( ) is arranged to store charge. A high voltage threshold transistor ( ) couples the native device to the first and second conductors.
Memory Circuit Capable Of Simultaneous Writing And Refreshing On The Same Column And A Memory Cell For Application In The Same
Cyrus Afghahi - Mission Viejo CA Sami Issa - Phoenix AZ
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 1134
US Classification:
365187, 365222, 36518904
Abstract:
A system-on-chip (SOC) device or a random access memory (RAM) chip includes a RAM block. The RAM block includes memory cells, each of which has three transistors. Each memory cell is coupled to both a read bit line and a write bit line. A transparent continuous refresh mechanism has been implemented to read the content of a memory cell and re-write it back to the memory cell without disturbing the access (read/write) cycle, making refresh operations transparent to the system level. The continuous refresh mechanism includes a collision detection mechanism to prevent writing and reading the same memory cell at the same time.
Block Redundancy Implementation In Heirarchical Rams
Esin Terzioglu - Aliso Viejo CA Gil I. Winograd - Aliso Viejo CA Cyrus Afghahi - Mission Viejo CA
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 700
US Classification:
365200, 36523008
Abstract:
The present invention relates to a system and method for providing redundancy in a hierarchically memory, by replacing small blocks in such memory. The present invention provides such redundancy (i. e. , replaces such small blocks) by either shifting predecoded lines or using a modified shifting predecoder circuit in the local predecoder block. In one embodiment, the hierarchal memory structure includes at least one active predecoder adapted to be shifted out of use; and at least one redundant predecoder adapted to be shifted in to use.
Cyrus Afghahi - Mission Viejo CA Sami Issa - Phoenix AZ
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 700
US Classification:
36518904, 365222
Abstract:
A system-on-chip (SOC) device or a random access memory (RAM) chip includes a RAM block. The RAM block includes memory cells, each of which has three transistors. Each memory cell is coupled to both a read bit line and a write bit line. A transparent continuous refresh mechanism has been implemented to read the content of a memory cell and re-write it back to the memory cell without disturbing the access (read/write) cycle, making refresh operations transparent to the system level. The continuous refresh mechanism includes a collision detection mechanism to prevent writing and reading the same memory cell at the same time.
Gil I. Winograd - Aliso Viejo CA Esin Terzioglu - Aliso Viejo CA Cyrus Afghahi - Mission Viejo CA Ali Anvar - Irvine CA Sami Issa - Phoenix AZ
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 502
US Classification:
365 63, 365 51
Abstract:
The present invention relates to a system and method for providing distributed, highly configurable modular predecoding. The system includes a hierarchical memory structure, including a predecoder adapted to perform a first layer of address predecoding and at least one local predecoder interacting with the global predecoder and adapted to perform a second layer of address predecoding.
Memory Device Having Simultaneous Read/Write And Refresh Operations With Coincident Phases
Cyrus Afghahi - Mission Viejo CA, US Sami Issa - Phoenix AZ, US
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C007/00
US Classification:
36518904, 36518907, 365222
Abstract:
A system-on-chip (SOC) device or a random access memory (RAM) chip includes a RAM block. The RAM block includes memory cells, each of which has three transistors. Each memory cell is coupled to both a read bit line and a write bit line. A transparent continuous refresh mechanism has been implemented to read the content of a memory cell and re-write it back to the memory cell without disturbing the access (read/write) cycle, making refresh operations transparent to the system level. The continuous refresh mechanism includes a collision detection mechanism to prevent writing and reading the same memory cell at the same time.
Gil I. Winograd - Aliso Viejo CA, US Esin Terzioglu - Aliso Viejo CA, US Cyrus Afghahi - Mission Viejo CA, US Ali Anvar - Irvine CA, US Sami Issa - Phoenix AZ, US
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C008/00
US Classification:
36523006, 365 63, 36523003
Abstract:
The present invention relates to a system and method for providing distributed, highly configurable modular predecoding. The method comprising forming a hierarchical memory structure including forming a first portion of the hierarchical memory structure adapted to perform a first layer of address predecoding. The method further comprises forming a second portion of the hierarchical memo structure interacting with at least the first portion and adapted to perform a second layer of address predecoding.
Block Redundancy Implementation In Heirarchical Ram's
Esin Terzioglu - Aliso Viejo CA, US Gil I. Winograd - Aliso Viejo CA, US Cyrus Afghahi - Mission Viejo CA, US
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 11/00
US Classification:
36523006, 365200, 365239, 365240, 36523003
Abstract:
The present invention relates to a system and method for providing redundancy in a hierarchically memory, by replacing small blocks in such memory. The present invention provides such redundancy (i. e. , replaces such small blocks) by either shifting predecoded lines or using a modified shifting predecoder circuit in the local predecoder block. In one embodiment, the hierarchal memory structure includes at least one redundant predecoder adapted to be shifted in for at least one active predecoder of a plurality of predecoders adapted to be shifted out.
Name / Title
Company / Classification
Phones & Addresses
Cyrus Afghahi President
UNITY INTEGRATION USA CORPORATION Engineering Svcs
621 Cardiff, Irvine, CA 92606 621 Cardiss, Irvine, CA 92606 949 412-4201
Cyrus Afghahi Chief Executive Officer, CTO
Novelics LLC Mfg Electronic Components · Other Electronic Component Manufacturing
26895 Aliso Crk Rd, Laguna Beach, CA 92656 949 448-5900
Broadcom Jan 2010 - Sep 2016
Director
Novelics May 2005 - Jun 2008
Chief Executive Officer and Co-Founder
Intel Corporation 1995 - 1999
Principal Engineer
Carlestedt Jan 1990 - Jan 1992
Manager
Education:
The Institute of Technology at Linköping University 1985 - 1990
Linköping University 1985 - 1990
Doctorates, Doctor of Philosophy, Design, Philosophy