Curtis Lee Burt

US Patent:

58917691, Apr 6, 1999

Filed:

Feb 27, 1998

Appl. No.:

/046559

Inventors:

Hang Ming Liaw - Scottsdale AZ
Curtis Lee Burt - Glendale AZ
Stella Q. Hong - Gilbert AZ
Clifford P. Stein - San Diego CA

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 21338

US Classification:

438167

Abstract:

A method for forming a relaxed semiconductor layer (12) includes forming a strained semiconductor layer on a substrate (11). The strained semiconductor layer has a different lattice constant than the substrate (11). Without exposing the strained semiconductor layer to an oxidizing ambient, the strained semiconductor layer is relaxed using thermal stress.

US Patent:

52883647, Feb 22, 1994

Filed:

Aug 20, 1992

Appl. No.:

7/932820

Inventors:

Curtis L. Burt - Glendale AZ
John W. Steele - Chandler AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

C30B 2516

US Classification:

156601

Abstract:

An epitaxial reactor (10) includes a bell jar (11) wherein epitaxial depositions are performed. During an epitaxial deposition cycle, the temperature of the bell jar (11) is monitored by an infrared detector (22). After the temperature reaches a predetermined value, initiation of further epitaxial deposition cycles is inhibited. The control method extends the useful lifetime of heating lamps (12) and bell jar seals thereby reducing the cost of semiconductor wafers (16).