Craig E Baldwin

US Patent:

6431112, Aug 13, 2002

Filed:

May 4, 2000

Appl. No.:

09/565606

Inventors:

Edward L. Sill - San Diego CA
William D. Jones - Phoenix AZ
Craig T. Baldwin - Chandler AZ

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23C 16509

US Classification:

118723E, 118723 R, 361234

Abstract:

A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma, a substrate support within the chamber, and a plurality of electrodes coupled to the substrate support. The electrodes are each positioned proximate the supporting surface and are electrically isolated from one another. An RF power source is coupled to each of the electrodes for biasing the electrodes, so that they are operable for creating a DC bias on a substrate positioned on the supporting surface. A first electrically capacitive structure is electrically coupled between the RF power source and at least one of the plurality of electrodes. The first electrically capacitive structure has a variable capacitance for varying the DC bias created on the substrate by the at least one electrode relative to the DC bias created on the substrate by at least one of the other electrodes of the plurality of electrodes. The varied DC bias thereby varies the effect of a plasma on one portion of the substrate relative to the effect of the plasma on another portion of the substrate.

US Patent:

6577113, Jun 10, 2003

Filed:

Jun 6, 2001

Appl. No.:

09/875341

Inventors:

Edward L. Sill - Escondido CA
William D. Jones - Phoenix AZ
Craig T. Baldwin - Chandler AZ

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G01R 3102

US Classification:

324 725

Abstract:

A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. Multiple voltage measurement circuits are electrically coupled to the RF power source and the electrodes to measure voltages at multiple points. A precursor determines the DC bias levels of the electrodes based on the multiple measurement points.

US Patent:

6596550, Jul 22, 2003

Filed:

Mar 8, 2002

Appl. No.:

10/093628

Inventors:

Edward L. Sill - San Diego CA
William D. Jones - Phoenix AZ
Craig T. Baldwin - Chandler AZ

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L 2100

US Classification:

438 10, 438 17, 438714, 216 61, 427 10

Abstract:

A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. A first comparator having first and second inputs is electrically coupled to one of the electrodes with an isolating device being coupled between the first and second inputs to isolate the first input from the bias on the one electrode. The comparator has an output reflective of a voltage difference between the first and second inputs. A second comparator has a first input coupled to the first electrode and a second input coupled to the second electrode, and has an output reflective of a voltage difference between the first and second inputs resulting from the bias difference between the first and second electrodes.

US Patent:

6367413, Apr 9, 2002

Filed:

May 26, 2000

Appl. No.:

09/580824

Inventors:

Edward L. Sill - San Diego CA
William D. Jones - Phoenix AZ
Craig T. Baldwin - Chandler AZ

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23F 102

US Classification:

118723E, 118723 E, 118728

Abstract:

A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. A first comparator having first and second inputs is electrically coupled to one of the electrodes with an isolating device being coupled between the first and second inputs to isolate the first input from the bias on the one electrode. The comparator has an output reflective of a voltage difference between the first and second inputs. A second comparator has a first input coupled to the first electrode and a second input coupled to the second electrode, and has an output reflective of a voltage difference between the first and second inputs resulting from the bias difference between the first and second electrodes.