Changxue X Wang

US Patent:

20110186542, Aug 4, 2011

Filed:

Apr 11, 2011

Appl. No.:

13/084024

Inventors:

Yuzhuo LI - Norwood NY, US
Changxue WANG - Potsdam NY, US

Assignee:

ASPT, INC. - Northbrook IL

International Classification:

H05K 3/00
C09K 13/00
C23F 1/00
C23F 1/26
C23F 1/30
C23F 1/38
C23F 1/40
B82Y 30/00

US Classification:

216 13, 252 791, 216 53, 977773

Abstract:

A chemical mechanical polishing slurry containing multiple oxidizers and nano abrasive particles (including engineered nano diamond particles) suitable for polishing multilayer substrate with tungsten and Ti/TiN barrier layers. The slurry contains no metallic catalyst and has low total abrasive particle content. The absence of metal ions can be advantageous for certain applications as certain metal ions may present contamination issues. A low total abrasive content may also lower the total defect counts, reduce the slurry waste treatment burden, and simplify the post CMP clean process.

US Patent:

20130344696, Dec 26, 2013

Filed:

Feb 28, 2012

Appl. No.:

14/004585

Inventors:

Yuzhuo Li - Mannheim, DE
Changxue Wang - Potsdam NY, US
Daniel Kwo-Hung Shen - Junghe City, TW

Assignee:

BASF SE - LUDWIGSHAFEN

International Classification:

H01L 21/306

US Classification:

438693

Abstract:

Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.

US Patent:

20090047787, Feb 19, 2009

Filed:

Jul 30, 2008

Appl. No.:

12/220958

Inventors:

Yuzhuo Li - Norwood NY, US
Changxue Wang - Potsdam NY, US

International Classification:

H01L 21/304
C09K 13/00
B44C 1/22

US Classification:

438693, 252 791, 216 53, 216 13, 257E21237

Abstract:

A chemical mechanical polishing slurry containing multiple oxidizers and nano abrasive particles (including engineered nano diamond particles) suitable for polishing multilayer substrate with tungsten and Ti/TiN barrier layers. The slurry contains no metallic catalyst and has low total abrasive particle content. The absence of metal ions can be advantageous for certain applications as certain metal ions may present contamination issues. A low total abrasive content may also lower the total defect counts, reduce the slurry waste treatment burden, and simplify the post CMP clean process.