Byron J Palla

US Patent:

20040211750, Oct 28, 2004

Filed:

Feb 10, 2003

Appl. No.:

10/361933

Inventors:

Byron Palla - Sachse TX, US

International Classification:

C23F001/00
B32B003/00

US Classification:

216/004000, 428/209000, 428/069000

Abstract:

Disclosed are a semiconductor wafer () having a front side laser scribe () and the methods for manufacturing the same. The methods of the invention include the formation of a scribe foundation () on the front side of the semiconductor wafer () designed to accept laser scribing (), and laser scribing the scribe foundation (). Disclosed embodiments include a semiconductor wafer () having a scribe foundation () of layered dielectric () and metal () on the front side. According to disclosed embodiments of the invention, the formation of a scribe foundation () is performed in combination with the formation of a top level metal layer () on the semiconductor wafer () methods for manufacturing.

US Patent:

20080090377, Apr 17, 2008

Filed:

Oct 18, 2007

Appl. No.:

11/874569

Inventors:

Byron Palla - Sachse TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/76

US Classification:

438401000

Abstract:

Disclosed are a semiconductor wafer () having a front side laser scribe () and the methods for manufacturing the same. The methods of the invention include the formation of a scribe foundation () on the front side of the semiconductor wafer () designed to accept laser scribing (), and laser scribing the scribe foundation (). Disclosed embodiments include a semiconductor wafer () having a scribe foundation () of layered dielectric () and metal () on the front side. According to disclosed embodiments of the invention, the formation of a scribe foundation () is performed in combination with the formation of a top level metal layer () on the semiconductor wafer () methods for manufacturing.