Byoung Kwon Cha

US Patent:

RE40076, Feb 19, 2008

Filed:

Jul 25, 2001

Appl. No.:

09/915906

Inventors:

Byoung Kwon Cha - Pleasanton CA, US

Assignee:

Hynix Semiconductor Inc. - Inchon-shi

International Classification:

G11C 16/34

US Classification:

36518907, 36518522, 36518908

Abstract:

The program circuit according to the present invention can apply a program voltage to the only memory cells which are not programmed during a re-programming operation, thus, the present invention can be prevent a lowering of reliability of the memory cell due to a continued supply of a program bias voltage.

US Patent:

20190318790, Oct 17, 2019

Filed:

Dec 19, 2018

Appl. No.:

16/226168

Inventors:

- Wuhan, CN
Bin SHENG - Wuhan, CN
Byoung Kwon CHA - San Jose CA, US
Yi XU - Wuhan, CN
Jen-Tai HSU - San Jose CA, US

International Classification:

G11C 16/30
G11C 16/14
G05F 3/20
H02M 3/07

Abstract:

A circuit for regulating a leakage current in a charge pump is disclosed. The circuit includes a bias voltage generating circuit and a first transistor, wherein: the bias voltage generating circuit generates a bias voltage that is proportional to a supply voltage; a gate of the first transistor is coupled to the bias voltage; the first transistor has a drain that is coupled to an output of the charge pump and a source that is grounded; a voltage the drain of the first transistor is proportional to the supply voltage; and a current flowing through the source and drain of the first transistor is proportional to the supply voltage that powers the charge pump.

US Patent:

20190319534, Oct 17, 2019

Filed:

Dec 18, 2018

Appl. No.:

16/223674

Inventors:

- Wuhan, CN
Zhifeng MAO - Wuhan, CN
Yi LUO - Wuhan, CN
Byoung Kwon CHA - San Jose CA, US
Jen-Tai HSU - San Jose CA, US

International Classification:

H02M 3/07

Abstract:

A charge pump is disclosed, including: multiple charge-pump stages connected sequentially; multiple switches, coupled between output of a corresponding one of charge-pump stages and output of charge pump; multiple second switches, coupled, at one end, to output of a corresponding one of charge-pump stages and to input of immediately succeeding one of charge-pump stages at other end; and multiple third switch, coupled between output of corresponding one of charge-pump stages and input of charge pump. First, second and third switches are opened or closed to determine a number of charge-pump stages connected in series and a number of charge-pump stages connected in parallel. The greater the number of charge-pump stages connected in series in charge-pump cascade is, the higher output voltage of charge pump will be, and the greater the number of charge-pump stages connected in parallel in charge-pump cascade, the higher drive current produced by charge pump will be.