Bruno Ullrich - Bowling Green OH, US Artur Erlacher - Bowling Green OH, US
Assignee:
Bowling Green State University - Bowling Green OH
International Classification:
H01L 31/062
US Classification:
257233, 257292, 257E31105
Abstract:
The present invention includes methods for producing GaAs/Si composites, GaAs/Si composites, apparatus for preparing GaAs/Si composites, and a variety of electronic and photoelectric circuits and devices incorporating GaAs/Si composites of the present invention.
All Optical And Hybrid Reflection Switch At A Semiconductor/Glass Interface Due To Laser Beam Intersection
Bruno Ullrich - Wayne OH, US Artur Erlacher - Velden, AT
Assignee:
Bowling Green State University - Bowling Green OH
International Classification:
G01N 21/55
US Classification:
356447, 356445
Abstract:
The present invention includes a method of changing intensity of a reflected beam which may be expressed as a method of changing the amount of reflected light from a beam of light, the method comprising: (a) providing a substrate bearing a film of a reflective material; (b) directing a first beam of light at a reflecting point upon the reflective material so as to create a reflecting beam therefrom; (c) directing a second beam of light at the reflecting point upon the reflective material so as to alter the amount of light in the reflecting beam, and (d) detecting the change in the amount of light in the reflecting beam. The invention also includes an apparatus for changing the amount of reflected light from a beam of light and measuring that change, as well as related apparatus for a pulsed optical signal.
Method And Apparatus For Producing Gallium Arsenide And Silicon Composites And Devices Incorporating Same
Bruno Ullrich - Bowling Green OH, US Artur Erlacher - Bowling Green OH, US
Assignee:
BOWLING GREEN STATE UNIVERSITY - Bowling Green OH
International Classification:
H04L 12/00 H01L 29/772 H01L 29/778
US Classification:
370464, 257183, 257192, 257E29246, 257E29242
Abstract:
The present invention includes methods for producing GaAs/Si composites, GaAs/Si composites, apparatus for preparing GaAs/Si composites, and a variety of electronic and photoelectric circuits and devices incorporating GaAs/Si composites of the present invention.
All Optical And Hybrid Reflection Switch At A Semiconductor/Glass Interface Due To Laser Beam Intersection
Bruno Ullrich - Wayne OH, US Artur Erlacher - Velden, AT
Assignee:
Bowling Green State University - Bowling Green OH
International Classification:
G01N 21/55
US Classification:
356447, 356445
Abstract:
The present invention includes a method of changing intensity of a reflected beam which may be expressed as a method of changing the amount of reflected light from a beam of light, the method comprising: (a) providing a substrate bearing a film of a reflective material; (b) directing a first beam of light at a reflecting point upon the reflective material so as to create a reflecting beam therefrom; (c) directing a second beam of light at the reflecting point upon the reflective material so as to alter the amount of light in the reflecting beam, and (d) detecting the change in the amount of light in the reflecting beam. The invention also includes an apparatus for changing the amount of reflected light from a beam of light and measuring that change, as well as related apparatus for providing a pulsed optical signal by changing the amount of reflected light from a beam of light.