Bruce A Tweed

US Patent:

50453467, Sep 3, 1991

Filed:

Jul 31, 1990

Appl. No.:

7/560688

Inventors:

Marvin J. Tabasky - Peabody MA
Bruce Tweed - Pelham NH

Assignee:

GTE Laboratories Incorporated - Waltham MA

International Classification:

B05D 306

US Classification:

427 39

Abstract:

Method of forming a fluorinated silicon nitride film on a semiconductor substrate by first forming a coating of ammonium hexafluorosilicate on the electrode of a plasma reactor to serve as a source of fluorine during the silicon nitride deposition procedure. The ammonium hexafluorosilicate coating is formed by generating a plasma of carbon tetrafluoride and oxygen within the reactor, then a plasma of nitrogen, followed by a plasma of silane and helium with nitrogen. The substrate is then placed in the reactor and a plasma employing silane and helium together with nitrogen is generated at low RF frequency to produce a fluorinated silicon nitride film on the substrate.