Brian H Moeckly

US Patent:

7117025, Oct 3, 2006

Filed:

Jun 3, 2002

Appl. No.:

10/162531

Inventors:

Chien-Fu Shih - Sunnyvale CA, US
Yongming Zhang - San Diego CA, US
Brian H. Moeckly - Palo Alto CA, US

Assignee:

Conductus, Inc. - Sunnyvale CA

International Classification:

H03H 7/01

US Classification:

505210, 333 99 S, 333174, 333205, 505700, 505866

Abstract:

A method and apparatus for providing dynamic and remote tuning of a cryo-cooled bandpass filter is disclosed. The device includes resonator element and a voltage sensitive element as part of the capacitance in a narrow band filter circuit. A varactor such as a GaAs varactor may be used. Alternatively, a capacitor having a voltage-sensitive dielectric such as SrTiOmay be used. A computer may be connected to the varactor to provide for automated tuning. The voltage-sensitive capacitor may be integral with the resonator element. The invention provides for remote and dynamic tuning of a narrow bandpass filter while located within its sealed cryo-cooled environment.

US Patent:

7317364, Jan 8, 2008

Filed:

Jul 11, 2006

Appl. No.:

11/484254

Inventors:

Chien-Fu Shih - Sunnyvale CA, US
Yongming Zhang - San Diego CA, US
Brian H. Moeckly - Palo Alto CA, US

Assignee:

Conductus, Inc. - Sunnyvale CA

International Classification:

H03H 7/12
H01B 12/02

US Classification:

333 171, 333 99 S, 505210

Abstract:

A method and apparatus for providing dynamic and remote tuning of a cryo-cooled bandpass filter is disclosed. The device includes resonator element and a voltage sensitive element as part of the capacitance in a narrow band filter circuit. A varactor such as a GaAs varactor may be used. Alternatively, a capacitor having a voltage-sensitive dielectric such as SrTiOmay be used. A computer may be connected to the varactor to provide for automated tuning. The voltage-sensitive capacitor may be integral with the resonator element. The invention provides for remote and dynamic tuning of a narrow bandpass filter while located within its sealed cryo-cooled environment.

US Patent:

7439208, Oct 21, 2008

Filed:

Dec 1, 2003

Appl. No.:

10/726232

Inventors:

Brian H. Moeckly - Menlo Park CA, US
Ward S. Ruby - Palm City FL, US

Assignee:

Superconductor Technologies, Inc. - Santa Barbara CA

International Classification:

H01L 39/24
C23C 14/34
C23C 14/24
B05D 5/12

US Classification:

505470, 505475, 505476, 427 62, 4271261, 427294, 427537, 427561, 427593, 20419224, 118719, 438758, 29599

Abstract:

A method of forming MgBfilms in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.

US Patent:

7738933, Jun 15, 2010

Filed:

Jan 8, 2008

Appl. No.:

11/970695

Inventors:

Chien-Fu Shih - Sunnyvale CA, US
Yongming Zhang - San Diego CA, US
Brian H. Moeckly - Palo Alto CA, US

Assignee:

Conductus, Inc. - Santa Barbara CA

International Classification:

H03H 7/12
H01B 12/02

US Classification:

505210, 333 99 S, 333174, 333175

Abstract:

An apparatus for providing dynamic and remote tuning of a cryo-cooled bandpass filter is disclosed. The device includes resonator element and a voltage sensitive element as part of the capacitance in a narrow band filter circuit. A varactor such as a GaAs varactor may be used. Alternatively, a capacitor having a voltage-sensitive dielectric such as SrTiOmay be used. A computer may be connected to the varactor to provide for automated tuning. The voltage-sensitive capacitor may be integral with the resonator element. The invention provides for remote and dynamic tuning of a narrow bandpass filter while located within its sealed cryo-cooled environment.

US Patent:

7867950, Jan 11, 2011

Filed:

Dec 22, 2005

Appl. No.:

11/317889

Inventors:

Brian Moeckly - Santa Barbara CA, US
Viktor Gliantsev - San Jose CA, US
Shing-jen (Luke) Peng - Mountain View CA, US
Balam Willemsen - Newbury Park CA, US

Assignee:

Superconductor Technologies, Inc. - Santa Barbara CA

International Classification:

H01L 39/00

US Classification:

505779, 505776, 505777, 505778, 505780

Abstract:

The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, R, and highly linear surface reactance, X, i. e. high J. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

US Patent:

8022012, Sep 20, 2011

Filed:

Sep 11, 2008

Appl. No.:

12/209142

Inventors:

Brian H. Moeckly - Menlo Park CA, US
Ward S. Ruby - Palm City FL, US

Assignee:

Superconductor Technologies, Inc. - Santa Barbara CA

International Classification:

H01L 39/24
H01L 21/31
C23C 14/00
C23C 16/00
B05D 5/12

US Classification:

505470, 505475, 505476, 438763, 438758, 4272481, 42725526, 427294, 427561, 427585, 118719, 20419224

Abstract:

A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

US Patent:

8290553, Oct 16, 2012

Filed:

Aug 26, 2011

Appl. No.:

13/219380

Inventors:

Brian H. Moeckly - Menlo Park CA, US
Ward S. Ruby - Palm City FL, US

Assignee:

Superconductor Technologies, Inc. - Santa Barbara CA

International Classification:

C23C 16/448
C23C 16/458
H01L 39/24
H01L 21/00
H01L 41/00

US Classification:

505150, 505826, 505950, 118726, 118729, 118719, 118723 VE

Abstract:

A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

US Patent:

20040134967, Jul 15, 2004

Filed:

Nov 6, 2003

Appl. No.:

10/704215

Inventors:

Brian Moeckly - Palo Alto CA, US
Kookrin Char - Palo Alto CA, US

Assignee:

Conductis, Inc. - Sunnyvale CA

International Classification:

B23K001/00

US Classification:

228/101000

Abstract:

A process is provided for fabricating YBaCuOthin-film edge junctions in which no deposited barrier is employed. These devices display excellent RSJ-type I-V characteristics with values of Iand Rtunable over a useful range for operation of digital circuits.