Brent A Burns

US Patent:

6343178, Jan 29, 2002

Filed:

Nov 7, 2000

Appl. No.:

09/707602

Inventors:

Brent E. Burns - Rancho Palos Verdes CA

Assignee:

Integrated Micromachines, Inc. - Pasadena CA

International Classification:

G02B 600

US Classification:

385140, 359847

Abstract:

This invention provides a very sensitive optical attenuator, which can be used to couple and attenuate optical signals between optical fibers with a wide range of attenuation level. Such an optical attenuator includes a flexible conductive membrane to be moved by an external force, such as electrostatic force, to achieve deformation of the conductive membrane. The conductive membrane can be formed, for example, by a vacuum deposited silicon nitride film. A thin metallic, conductive layer is then deposited on the flexible membrane to form a reflective mirror to receive and reflect incident optical signals. The semiconductor structure includes one or more spacing posts, with which the first structural member is to be joined and bonded. Electrodes are placed on the semiconductor structure in close proximity to the flexible membrane. At various areas of the semiconductor structure, additional spacing posts are added to cause deformation of the conductive membrane when a voltage is applied between the membrane and the electrodes on the semiconductor structure.

US Patent:

6542653, Apr 1, 2003

Filed:

Mar 12, 2001

Appl. No.:

09/805306

Inventors:

Shuyun Wu - Arcadia CA
Brent E. Burns - Rancho Palos Verdes CA

Assignee:

Integrated Micromachines, Inc. - Monrovia CA

International Classification:

G02B 635

US Classification:

385 16, 385 15, 385 18

Abstract:

The present invention is directed to a micro-switch assembly involving a magnetic latching mechanism. In one aspect of the present invention, it involves a micromachined structure that comprises an outer frame, an inner frame pivotally connected to the outer frame and rotates when an external electromagnetic force is applied, and a mechanism for latching the inner frame at a given angle of inclination relative to the outer frame. One embodiment of the present invention involves the use of a magnetic material, such as Permalloy, and permanent magnets to achieve the latching result. A Permalloy piece is attached to the inner frame of the micro-switch assembly and a magnet layer is attached to the outer frame. The magnetic force attracting the Permalloy piece and the magnet layer allows the latching of the two frames to occur in the absence of the external applied electromagnetic force. The use of this magnetic latching mechanism allows a reduction in the use of electric current to maintain a movable frame in a micromachined structure or a micro-switch assembly in a fixed position.

US Patent:

20010046346, Nov 29, 2001

Filed:

Aug 2, 1999

Appl. No.:

09/366428

Inventors:

BRENT E. BURNS - RANCHO PALOS VERDES CA, US

International Classification:

G02B006/35

US Classification:

385/018000, 359/872000, 216/024000

Abstract:

An opto-mechanical micro-switch has a micromachined structure fabricated from a single silicon substrate. The micromachined structure includes an inner frame connected by a pair of beams to an outer frame. The beams define an axis of rotation around which the inner frame rotates relative to the outer frame. Flat walls are formed on the inner frame by an anisotropic etching process. When the inner frame rotates relative to the outer frame, the flat wall pivots into a vertical position to reflect or impede light passing from a light source to a light receiver. During fabrication, etch-stop material is selectively deposited in predefined regions of the single silicon substrate, and then a masking layer is formed and patterned. The anisotropic etching process is then performed through openings in the masking layer to form the inner frame and the outer frame. The etch-stop material prevents etching in the predefined regions that are located between the inner and outer frames, thereby forming the beams. In one embodiment, Permalloy regions are formed on the inner frame prior to the anisotropic etching process. These Permalloy regions are subsequently utilized as part of a drive motor to rotate the inner frame relative to the outer frame.

US Patent:

53926501, Feb 28, 1995

Filed:

Apr 22, 1993

Appl. No.:

8/052017

Inventors:

Benedict B. O'Brien - Manhattan Beach CA
Brent E. Burns - Torrance CA
John A. Geen - Wrentham MA

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

G01P 15125
G01C 1956

US Classification:

73517A

Abstract:

An integrated rate and acceleration sensor includes at least one accelerometer formed from a substantially planar silicon body. The at least one micro-silicon accelerometer (MSA) includes a first frame and a proof mass suspended from the first frame by first flexures. The at least one accelerometer has an associated sensitive axis and an associated rate axis that is orthogonally disposed to the sensitive axis. The integrated sensor further includes structure for dithering or vibrating the proof mass along a dither axis that is disposed perpendicularly to both the rate and the sensitive axes. The dithering structure includes at least first and second interdigitated electrodes. Finger portions of the electrodes are disposed for exerting an electrostatic force upon a portion of the planar body in response to an oscillatory drive signal. The portion of the planar body has a plurality of linear grooves formed therein, the plurality of linear grooves being disposed in a parallel orientation with the finger portions. A vibrating accelerometer gyro (VAG) structure is constructed by micromachining techniques such that the linear momenta of two vibrating MSAs balance one another.

US Patent:

57387575, Apr 14, 1998

Filed:

Nov 22, 1995

Appl. No.:

8/521903

Inventors:

Brent E. Burns - Rancho Palos Verdes CA
Benedict B. O'Brien - Manhattan Beach CA

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

C03C 1500

US Classification:

1566441

Abstract:

A planar masking process for multi-depth etching of a silicon wafer wherein more than one etch depth is photolithographically patterned prior to etching the wafer and while the wafer still has a planar surface. A plurality of layers of masking material are disposed on at least one of the top and bottom surfaces of the silicon wafer and various of these layers are patterned by selectively photolithographically patterning and removing regions of the layers to form masks for areas where different silicon etch depths are desired. After forming the masks, the wafer is etched to a first level and the outermost mask is removed by etching. The silicon wafer is then again etched to another level with the remaining masks in place. The uppermost mask of the remaining masks is removed and the silicon wafer is again etched to still another level. The process is repeated until the desired levels have been etched in the silicon wafer.

US Patent:

52051714, Apr 27, 1993

Filed:

Jan 11, 1991

Appl. No.:

7/640449

Inventors:

Benedict B. O'Brien - Manhattan Beach CA
Brent E. Burns - Torrance CA
John A. Geen - Wrentham MA

Assignee:

Northrop Corporation - Hawthorne CA

International Classification:

G01P 1513
G01P 15125

US Classification:

73517B

Abstract:

A miniature accelerometer is fabricated using integrated circuit manufacturing and silicon micromachining techniques to form a closed loop, force balance sensor utilizing a silicon proofmass formed from and connected to a layer of silicon by a split flexure etched therein. The sensor circuitry detects AC signals coupled from the proofmass to a pair of electrodes formed on glass surfaces anodically bonded to the silicon layer. A DC restorative force is applied to the electrodes in response to the detected AC signals to balance acceleration forces applied to the proofmass. The sensor design is highly symmetrical.

US Patent:

51702835, Dec 8, 1992

Filed:

Jul 24, 1991

Appl. No.:

7/735392

Inventors:

Benedict B. O'Brien - Manhattan Beach CA
Brent E. Burns - Torrance CA
King L. Hu - Lawndale CA
Adrian C. Ionescu - West Covina CA

Assignee:

Northrop Corporation - Hawthorne CA

International Classification:

G02B 2600
G02B 2608
H04N 574
H04N 308

US Classification:

359291

Abstract:

A spatial light modulator including a silicon backplate having an insulating layer and a standoff grid of insulating material deposited on the backplate to define an array of cells. An electrode is deposited in each cell on said backplate. A thin membrane of doped silicon is mounted to the standoff grid and over said array of cells and electrodes. Mirrors are laid on the membrane to create an array of reflective pixels over the array of cells. When an electrode is selectively charged the portion of the membrane overlying that cell is deflected by electrostatic attraction between the membrane and the electrode. Taken overall, a pattern is assumed by the array of pixels which corresponds to the state of the electrical signals placed on the electrodes. A vent hole formed in each cell from the electrode side of the backplate to the opposite side thereof for venting gas from the cell when said diaphragm is deflected, and grooves extend across the face of the backplate and over the cell to intersect the vent hole to assist in venting gas out of the cell and through the hole. The vent hole is preferably of a size and constructed for critical damping of the movement of the mass of the deflected diaphragm at said cell to control the movement caused by the electrostatic deflection.

Address:

555 North Ave, Fort Lee, NJ 07024

Phone:

201 768-2700

VIN:

WAUFFAFL4BN023574

Make:

AUDI

Model:

A4

Year:

2011