Brad D Cantos

US Patent:

7315560, Jan 1, 2008

Filed:

Jul 29, 2005

Appl. No.:

11/194077

Inventors:

Alan Lewis - Sunnyvale CA, US
Brad Cantos - San Francisco CA, US
Glen P. Carey - Palo Alto CA, US
William R. Hitchens - Mountain View CA, US
Jason P. Watson - San Jose CA, US
Aram Mooradian - Kentfield CA, US

Assignee:

Novalux, Inc. - Sunnyvale CA

International Classification:

H01S 5/00

US Classification:

372 50124, 372 5012, 372 50122

Abstract:

An array of surface emitting laser diodes has a series electrical connection of laser diodes. Junction isolation is used to isolate laser diodes in the array.

US Patent:

20070147458, Jun 28, 2007

Filed:

Jun 9, 2006

Appl. No.:

11/450044

Inventors:

Jason Watson - San Jose CA, US
Andrei Shchegrov - Campbell CA, US
Aram Mooradian - Kentfield CA, US
Kenneth Scholz - Palo Alto CA, US
William Hitchens - Mountain View CA, US
Brad Cantos - San Francisco CA, US
John Green - Scotts Valley CA, US

Assignee:

Novalux, Inc. - Sunnyvale CA

International Classification:

H01S 5/00

US Classification:

372050124, 372050120

Abstract:

Arrays of surface emitting lasers are disclosed. A top contact plate is patterned with apertures and used to form an electrical connection to a top surface of a laser die. The top contact plate reduces electrical resistance and improves current uniformity compared with conventional contacts formed by plating.

US Patent:

49353772, Jun 19, 1990

Filed:

Aug 1, 1989

Appl. No.:

7/388627

Inventors:

Walter A. Strifler - Cupertino CA
Brad D. Cantos - San Francisco CA

Assignee:

Watkins Johnson Company - Palo Alto CA

International Classification:

H01L 21265

US Classification:

437 41

Abstract:

Disclosed is a method of forming a uniform length gate electrode and contact for a microwave field-effect transistor where the gate electrode has a length of less than one micron. A photoresist plug is formed on the surface of a first photoresist layer, the plug functioning as a shadow mask in the subsequent deposition of a plasma-etch-resistant material (aluminum) over the surface of the plug and the first photoresist layer. A third photoresist layer is formed over the device structure whereby a contact region can be formed on the surface of the semiconductor sub-strate adjacent to the device region. Subsequently, the third photoresist layer is removed, and the previously shielded photoresist material over the gate electrode location is removed by plasma etch using the metal-covered plug and metal-covered first photoresist layer as a plasma-etch shield. A metal is then deposited in the exposed surface region for the gate electrode and contact, and thereafter the photoresist material is removed leaving the gate electrode and contact on the substrate surface.