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Bernhard Vogeli

age ~55

from Boston, MA

Bernhard Vogeli Phones & Addresses

  • 76 W Cedar St, Boston, MA 02114
  • Cambridge, MA

Us Patents

  • Non-Volatile Electromechanical Field Effect Devices And Circuits Using Same And Methods Of Forming Same

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  • US Patent:
    7115901, Oct 3, 2006
  • Filed:
    Jun 9, 2004
  • Appl. No.:
    10/864186
  • Inventors:
    Claude L. Bertin - South Burlington VT, US
    Thomas Rueckes - Boston MA, US
    Brent M. Segal - Woburn MA, US
    Bernhard Vogeli - Boston MA, US
    Darren K. Brock - Elmsford NY, US
    Venkatachalam C. Jaiprakash - Fremont CA, US
  • Assignee:
    Nantero, Inc. - Woburn MA
  • International Classification:
    H01L 35/24
    H01L 51/00
    H01L 29/778
  • US Classification:
    257 40, 257315
  • Abstract:
    Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage.
  • One-Time Programmable, Non-Volatile Field Effect Devices And Methods Of Making Same

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  • US Patent:
    7161218, Jan 9, 2007
  • Filed:
    Jun 9, 2004
  • Appl. No.:
    10/864572
  • Inventors:
    Claude L. Bertin - South Burlington VT, US
    Thomas Rueckes - Boston MA, US
    Brent M. Segal - Woburn MA, US
    Bernhard Vogeli - Boston MA, US
    Darren K. Brock - Elmsford NY, US
    Venkatachalam C. Jaiprakash - Fremont CA, US
  • Assignee:
    Nantero, Inc. - Woburn MA
  • International Classification:
    H01L 29/96
  • US Classification:
    257415, 257296, 257E27016, 257E27103, 977742
  • Abstract:
    One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.
  • System And Method For Performing Multi-Resolution Lithography

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  • US Patent:
    7303860, Dec 4, 2007
  • Filed:
    Dec 6, 2002
  • Appl. No.:
    10/313309
  • Inventors:
    Bernhard Vogeli - Boston MA, US
    Timothy A. Savas - Cambridge MA, US
    Henry I. Smith - Sudbury MA, US
    Caroline A. Ross - Boston MA, US
  • Assignee:
    Massachusetts Institute of Technology - Cambridge MA
  • International Classification:
    G03F 7/26
  • US Classification:
    430316, 430313
  • Abstract:
    A micro-fabricated structure and method of forming a micro-fabricated structure are disclosed. The method includes the steps of forming a first pattern in a first photo-resist, transferring the first pattern in the first photo-resist to a mask layer, forming a second pattern in a second photo-resist, and transferring the second pattern in the second photo-resist to the mask layer. In various embodiments, the method may further include the steps of forming a first pattern in a first photo-resist, forming a second pattern in a second photo-resist, and transferring the first and second patterns to a target layer.
  • Sensor Platform Using A Non-Horizontally Oriented Nanotube Element

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  • US Patent:
    7385266, Jun 10, 2008
  • Filed:
    May 12, 2004
  • Appl. No.:
    10/844883
  • Inventors:
    Brent M. Segal - Woburn MA, US
    Thomas Rueckes - Rockport MA, US
    Bernhard Vogeli - Boston MA, US
    Darren Brock - Elmsford NY, US
    Venkatachalam C. Jaiprakash - Fremont CA, US
    Claude L. Bertin - South Burlington VT, US
  • Assignee:
    Nantero, Inc. - Woburn MA
  • International Classification:
    H01L 29/66
  • US Classification:
    257414, 977902, 977920, 977921, 977922
  • Abstract:
    Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning.
  • Sensor Platform Using A Horizontally Oriented Nanotube Element

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  • US Patent:
    7780918, Aug 24, 2010
  • Filed:
    May 12, 2004
  • Appl. No.:
    10/844913
  • Inventors:
    Brent M. Segal - Wobum MA, US
    Thomas Rueckes - Boston MA, US
    Bernhard Vogeli - Boston MA, US
    Darren Brock - Elmsford NY, US
    Venkatachalam C. Jaiprakash - Fremont CA, US
    Claude L. Bertin - South Burlington VT, US
  • Assignee:
    Nantero, Inc. - Woburn MA
  • International Classification:
    G01N 27/00
  • US Classification:
    422 98, 422 88
  • Abstract:
    Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning.
  • Nanotube Permeable Base Transistor

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  • US Patent:
    20030234407, Dec 25, 2003
  • Filed:
    Jun 19, 2002
  • Appl. No.:
    10/175586
  • Inventors:
    Bernhard Vogeli - Boston MA, US
    Thomas Rueckes - Watertown MA, US
    Brent Segal - Medford MA, US
  • Assignee:
    Nantero, Inc.
  • International Classification:
    H01L029/06
    H01L031/0328
    H01L031/0336
    H01L031/072
    H01L031/109
  • US Classification:
    257/183000
  • Abstract:
    A permeable base transistor (PBT) having a base layer including metallic nanotubes embedded in a semiconductor crystal material is disclosed. The nanotube base layer separates emitter and collector layers of the semiconductor material.
  • Method Of Making Nanotube Permeable Base Transistor

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  • US Patent:
    20030236000, Dec 25, 2003
  • Filed:
    Jun 19, 2002
  • Appl. No.:
    10/174889
  • Inventors:
    Bernhard Vogeli - Boston MA, US
    Thomas Rueckes - Watertown MA, US
    Brent Segal - Medford MA, US
  • Assignee:
    Nantero, Inc.
  • International Classification:
    H01L021/31
  • US Classification:
    438/778000
  • Abstract:
    A method of making a permeable base transistor (PBT) is disclosed. According to the method, a semiconductor substrate is provided, a base layer is provided on the substrate, and a semiconductor layer is grown over the base layer. The base layer includes metallic nanotubes, which may be grown or deposited on the semiconductor substrate. The nanotube base layer separates emitter and collector layers of semiconductor material.
  • Nanoscopic Tunnel

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  • US Patent:
    20040075159, Apr 22, 2004
  • Filed:
    Oct 17, 2002
  • Appl. No.:
    10/272683
  • Inventors:
    Bernhard Vogeli - Boston MA, US
  • Assignee:
    Nantero, Inc.
  • International Classification:
    H01L029/06
    H01L021/76
    H01L023/544
  • US Classification:
    257/618000, 257/622000, 257/623000, 438/978000, 257/797000, 438/401000, 438/462000, 438/975000
  • Abstract:
    A nanoscopic tunnel is disclosed. The tunnel can be formed in or on a substrate, such as a semiconductor.

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