Arthur F Pun

US Patent:

20110031502, Feb 10, 2011

Filed:

Aug 10, 2009

Appl. No.:

12/538602

Inventors:

Michael John Bergmann - Chapel Hill NC, US
Kevin Ward Haberern - Cary NC, US
Bradley E. Williams - Cary NC, US
Winston T. Parker - Cary NC, US
Arthur Fong-Yuen Pun - Raleigh NC, US
Doowon Suh - Cary NC, US
Matthew Donofrio - Raleigh NC, US

International Classification:

H01L 33/00
H01L 29/24
F21V 7/22

US Classification:

257 77, 257 98, 36229604, 257E29104, 257E33068

Abstract:

Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.

US Patent:

20130069089, Mar 21, 2013

Filed:

Oct 26, 2012

Appl. No.:

13/661909

Inventors:

Florin Tudorica - Durham NC, US
David Todd Emerson - Chapel Hill NC, US
Michael John Bergmann - Chapel Hill NC, US
Arthur Fong-Yuen Pun - Raleigh NC, US

Assignee:

Cree, Inc - Durham NC

International Classification:

H01L 33/50
H01L 33/08

US Classification:

257 88, 257E3306

Abstract:

A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 250 lumens per watt, and in some cases up to 270 lumens per watt.

US Patent:

20060276038, Dec 7, 2006

Filed:

Jun 3, 2005

Appl. No.:

11/143739

Inventors:

Arthur Pun - Tallahassee FL, US
Jian-Ping Zheng - Tallahassee FL, US

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438689000

Abstract:

Disclosed is a method for removing a layer of native oxide from a surface of a substrate without altering the smoothness of the substrate surface comprising: 1) depositing on the substrate surface a thin sacrificial layer of the substrate surface material, having a thickness sufficient to react with all of the native oxide when the substrate surface is subjected to thermal oxide desorption conditions, and 2) subjecting the substrate to thermal oxide desorption conditions for a time sufficient for all of the native oxide layer to react with the deposited sacrificial layer of substrate material to form volatile reaction products and evaporate from the substrate surface.

US Patent:

20210265250, Aug 26, 2021

Filed:

May 7, 2021

Appl. No.:

17/314160

Inventors:

- Durham NC, US
Arthur PUN - Raleigh NC, US
Jeremy FISHER - Raleigh NC, US
Ulf ANDRE - Hillsborough NC, US
Alexander KOMPOSCH - Morgan Hill CA, US

International Classification:

H01L 23/498
H01L 23/66

Abstract:

An RF transistor package includes a metal submount; a transistor die mounted to the metal submount; and a surface mount IPD component mounted to the metal submount. The surface mount IPD component includes a dielectric substrate that includes a top surface and a bottom surface and at least a first pad and a second pad arranged on a top surface of the surface mount IPD component; at least one surface mount device includes a first terminal and a second terminal, the first terminal of the surface mount device mounted to the first pad and the second terminal mounted to the second pad; at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by the dielectric substrate; and at least one wire bond bonded to the at least one of the first pad and the second pad.

US Patent:

20210134766, May 6, 2021

Filed:

Nov 6, 2019

Appl. No.:

16/675750

Inventors:

- Durham NC, US
Arthur F. Pun - Raleigh NC, US
Colin Blakely - Raleigh NC, US

International Classification:

H01L 25/075
H01L 33/26
H01L 33/62

Abstract:

Lumiphoric material region arrangements are provided for light-emitting diode (LED) packages. Certain aspects relate to arrangements of light-altering materials and lumiphoric material regions for LED packages. Lumiphoric material regions over corresponding LED chips may include increased sizes relative to overall LED package dimensions. Lumiphoric material regions may be arranged to extend to certain peripheral edges of an LED package. Multiple lumiphoric material regions and corresponding LED chips may be arranged in close proximity to one another to provide LED packages with multiple and selectable illumination characteristics. Light-altering materials may be arranged that at least partially define certain peripheral edges of lumiphoric material regions. The light-altering materials may form one or more nonintersecting segments arranged about the lumiphoric material regions. Certain aspects relate to LED packages having one or more of reduced sizes, increased light output, and reduced fabrication steps.

US Patent:

20200411730, Dec 31, 2020

Filed:

Jun 26, 2019

Appl. No.:

16/453447

Inventors:

- Durham NC, US
Colin Blakely - Raleigh NC, US
Jesse Reiherzer - Raleigh NC, US
Arthur F. Pun - Raleigh NC, US

International Classification:

H01L 33/50
H01L 33/60
H01L 33/26

Abstract:

Solid-state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs are disclosed. LED packages are disclosed that include an LED chip with multiple discrete active layer portions mounted on a submount. The LED packages may further include wavelength conversion elements and light-altering materials. The multiple discrete active layer portions may be electrically connected in series, parallel, or in individually addressable arrangements. The LED chip with the multiple discrete active layer portions may provide the LED package with improved brightness, improved alignment, simplified manufacturing, and reduced costs.

US Patent:

20200075813, Mar 5, 2020

Filed:

Aug 31, 2018

Appl. No.:

16/118779

Inventors:

- Durham NC, US
Kenneth M. Davis - Raleigh NC, US
David Suich - Durham NC, US
Jae-Hyung Park - Cary NC, US
Arthur F. Pun - Raleigh NC, US

International Classification:

H01L 33/50
H01L 33/10
H01L 33/36
H01L 33/62

Abstract:

Light-emitting diodes (LEDs), LED arrays, and related devices are disclosed. An LED device includes a first LED chip and a second LED chip mounted on a submount with a light-altering material in between. The light-altering material may include at least one of a light-reflective material and/or a light-absorbing material. Individual wavelength conversion elements may be arranged on each of the first and second LED chips. The light-altering material may improve the contrast between the first and second LED chips as well as between the individual wavelength conversion elements. LED devices may include submounts in modular configurations where LED chips may be mounted on adjacent submounts to form an LED array. Each LED chip of the LED array may be laterally separated from at least one other LED chip by a same distance and a light-altering material may be arranged around the LED array.

US Patent:

20200075822, Mar 5, 2020

Filed:

Aug 20, 2019

Appl. No.:

16/545357

Inventors:

- Durham NC, US
Arthur F. Pun - Raleigh NC, US
Kenneth M. Davis - Raleigh NC, US

International Classification:

H01L 33/60
H01L 33/50
H01L 25/075

Abstract:

Light-emitting diodes (LEDs), LED arrays, and related devices are disclosed. An LED device includes a first LED chip and a second LED chip mounted on a submount with a light-altering material in between. The light-altering material may include at least one of a light-reflective material and/or a light-absorbing material. Individual wavelength conversion elements may be arranged on each of the first and second LED chips. The light-altering material may improve the contrast between the first and second LED chips as well as between the individual wavelength conversion elements. The light-altering material may include at least one of nanoparticles, nanowires, mesowires, or combinations thereof. LED devices may include submounts in modular configurations where LED chips may be mounted on adjacent submounts to form an LED array.