Uzodinma Okoroanyanwu - Mountain View CA, US Armando Bottelli - Santa Clara CA, US
Assignee:
Advanced Micro Devices, Inc.
International Classification:
G03F007/20 G03B027/00 G03F007/26
US Classification:
430/394000, 430/313000, 355/018000
Abstract:
An integrated circuit fabrication process for patterning features at sub-lithographic dimensions is disclosed herein. The process includes sequentially exposing a of a film of arylalkoxysilane with a photobase generator, and catalytic amount of water coated on top of a conventional lipophilic photoresist layer provided over a substrate and exposed to a radiation at a first and a second lithographic wavelengths. The first lithographic wavelength is shorter than the second lithographic wavelength. Exposure to the first lithographic wavelength causes a self-aligned mask to form within the photoresist layer.
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