Vital Thin Film Mateirals
Project Manager
Transmission Factory Mar 2010 - Dec 2012
Business Consultant
Iss Consulting Mar 2010 - Dec 2012
Senior Engineer
Heraeus 2008 - 2009
Maintenance and Facility Manager
Heraeus 1998 - 2008
Manufacturing Technologist
Education:
Corentyne High School
New Amersterdam Technical Institute
Associates, Associate of Arts, Engineering
Skills:
Manufacturing Lean Manufacturing Quality Assurance Process Engineering Leadership Continuous Improvement Management Cross Functional Team Leadership Process Improvement Project Planning Engineering Product Development Purchasing Manufacturing Operations Management Process Simulation Machining Materials Design of Experiments Business Process Improvement Root Cause Analysis 5S Fmea Kaizen Business Process Engineering Management Manufacturing Engineering Project Management Business Development Customer Service Failure Analysis Manufacturing Operations Microsoft Office Product Management Quality System Reliability Return on Investment Analysis Change Management Business Strategy Iso Inspection Iso 9000 Kanban Machine Tools Metallurgy Negotiation New Business Development Operations Management Quality Management R
Interests:
Exercise Sweepstakes Home Improvement Reading Gourmet Cooking Sports Golf Food Home Decoration Health Photograph Cooking Electronics Outdoors Fitness Music Family Values Movies Christianity Medicine Automobiles Travel Investing Traveling
Us Patents
Wrought Processing Of Brittle Target Alloy For Sputtering Applications
Michael Bartholomeusz - Phoenix AZ Michael Tsai - Phoenix AZ Anand Deodutt - Gilbert AZ
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
C22C 1907
US Classification:
148425, 148674
Abstract:
An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0. 5 and is annealed in a temperature range of 1000Â F. to 2500Â F. for a preselected time. The ingot is then rolled in a temperature range of 1500Â F. to 2500Â F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500Â F. to 2000Â F. , or between room temperature and 1500Â F. , and/or a final annealing between 500Â F. and 1500Â F. , is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.
High-Ptf Sputtering Targets And Method Of Manufacturing
Wenjun Zhang - Gilbert AZ, US Bernd Kunkel - Phoenix AZ, US Anand Deodutt - Gilbert AZ, US Michael Bartholomeusz - Phoenix AZ, US
International Classification:
B22F001/00
US Classification:
419/030000, 428/523000
Abstract:
A target for a deposition apparatus is formed by blending at least two different types of powders together and consolidating the powders with a powder metallurgy process to form a billet. The target is then formed from the billet. The target includes a first material phase having a first PTF and a second material phase having a second PTF higher than the first PTF. The second PTF is also higher than a PTF of a material having the same chemistry as the target.
Yuanda Cheng - Phoenix AZ, US Steven Kennedy - Chandler AZ, US Michael Racine - Phoenix AZ, US Anand Deodutt - Gilbert AZ, US
International Classification:
C23C014/32 B44C001/22
US Classification:
204298090, 204298120, 216052000, 216053000
Abstract:
A method for manufacturing a sputter target in which cooling rates are selectively controlled, by generating a sputter surface and a backside surface obverse to the sputter surface. The backside surface includes at least a first textured region. The first textured region aids in cooling a region of the sputter target adjacent to the first textured region, by effectuating heat dissipation.
Brittle Metal Alloy Sputtering Targets And Method Of Fabricating Same
Wuwen Yi - Tempe AZ, US Bernd Kunkel - Phoenix AZ, US Carl Derrington - Tempe AZ, US ShinHwa Li - Chandler AZ, US Anand Deodutt - Gilbert AZ, US
Assignee:
HERAEUS INC. - Chandler AZ
International Classification:
B22F 3/02 C23C 14/34
US Classification:
419 68, 20429802, 20429813
Abstract:
A method of fabricating a sputtering target assembly comprises steps of mixing/blending selected amounts of powders of at least one noble or near-noble Group VIII metal at least one Group IVB, VB, or VIB refractory metal; forming the mixed/blended powder into a green compact having increased density; forming a full density compact from the green compact; cutting a target plate slice from the full density compact; diffusion bonding a backing plate to a surface of the target plate slice to form a target/backing plate assembly; and machining the target/backing plate assembly to a selected final dimension. The disclosed method is particularly useful for fabricating large diameter Ru—Ta alloy targets utilized in semiconductor metallization processing.
Wrought Processing Of Brittle Target Alloy For Sputtering Applications
Michael Bartholomeusz - Phoenix AZ Michael Tsai - Phoenix AZ Anand Deodutt - Gilbert AZ
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
C22F 110
US Classification:
148674, 148120, 20429813
Abstract:
An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0. 5 and is annealed in a temperature range of 1000Â F. to 2500Â F. for a preselected time. The ingot is then rolled in a temperature range of 1500Â F. to 2500Â F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500Â F. to 2000Â F. , or between room temperature and 1500Â F. , and/or a final annealing between 500Â F. and 1500Â F. , is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.