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Amye L Wells

age ~47

from Highland Village, TX

Also known as:
  • Amye Leanne Wells
  • Amye Leanne Karnes
  • Amye L Karnes

Amye Wells Phones & Addresses

  • Highland Village, TX
  • 11 Romar Dr, Underhill, VT 05489 • 802 899-6703
  • Rio Rancho, NM
  • Las Cruces, NM
  • 605 Arbor Ct, Lewisville, TX 75077 • 802 899-6703

Work

  • Position:
    Professional/Technical

Education

  • Degree:
    Associate degree or higher

Us Patents

  • Use Of Photoresist In Substrate Vias During Backside Grind

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  • US Patent:
    6888223, May 3, 2005
  • Filed:
    Apr 1, 2003
  • Appl. No.:
    10/405763
  • Inventors:
    Donald W. Brouillette - St. Albans VT, US
    Joseph D. Danaher - Hinesburg VT, US
    Timothy C. Krywanczyk - Essex Junction VT, US
    Amye L. Wells - Underhill VT, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L023/048
  • US Classification:
    257621, 257622, 438459, 438667
  • Abstract:
    A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e. g. , photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.
  • Use Of Photoresist In Substrate Vias During Backside Grind

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  • US Patent:
    7074715, Jul 11, 2006
  • Filed:
    Nov 15, 2004
  • Appl. No.:
    10/989059
  • Inventors:
    Donald W. Brouillette - St. Albans VT, US
    Joseph D. Danaher - Hinesburg VT, US
    Timothy C. Krywanczyk - Essex Junction VT, US
    Amye L. Wells - Underhill VT, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21/4763
  • US Classification:
    438637, 438638, 438640
  • Abstract:
    A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e. g. , photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.
  • Prevention Of Slurry Build-Up Within Wafer Topography During Polishing

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  • US Patent:
    6455434, Sep 24, 2002
  • Filed:
    Oct 23, 2001
  • Appl. No.:
    10/001562
  • Inventors:
    Chad R. Binkerd - Burlington VT
    Jose L. Cruz - Essex Junction VT
    Timothy C. Krywanczyk - Essex Junction VT
    Brian D. Pfeifer - Milton VT
    Rosemary A. Previti-Kelly - Burlington VT
    Patricia Schink - Burlington VT
    Amye L. Wells - Underhill VT
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21302
  • US Classification:
    438692, 438633, 438631
  • Abstract:
    The present invention provides a method of preventing the build-up of polishing material within low areas of a substrate during polishing. Following the blanket deposition of a first layer, a selectively removable material is deposited over the first layer, wherein the selectively removable material fills the low areas. A surface of the substrate is polished removing the excess first layer and selectively removable material from the surface, leaving the first layer and selectively removable material within the low area. Following polishing, the selectively removable material is removed from the low areas prior to the deposition of a second layer.

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