Amit J Bansal

US Patent:

20090236214, Sep 24, 2009

Filed:

Mar 20, 2008

Appl. No.:

12/052431

Inventors:

Karthik Janakiraman - San Jose CA, US
Thomas Nowak - Cupertino CA, US
Juan Carlos Rocha-Alvarez - San Carlos CA, US
Mark A. Fodor - Los Gatos CA, US
Dale R. Du Bois - Los Gatos CA, US
Amit Bansal - Santa Clara CA, US
Mohamad Ayoub - San Jose CA, US
Eller Y. Juco - San Jose CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Hichem M'Saad - Santa Clara CA, US

International Classification:

C23C 16/00
H05H 1/24

US Classification:

204164, 118723 R

Abstract:

An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

US Patent:

20110090613, Apr 21, 2011

Filed:

Nov 19, 2010

Appl. No.:

12/950105

Inventors:

Ganesh Balasubramanian - Sunnyvale CA, US
Amit Bansal - Santa Clara CA, US
Eller Y. Juco - San Jose CA, US
Mohamad Ayoub - San Jose CA, US
Hyung-Joon Kim - Sunnyvale CA, US
Karthik Janakiraman - San Jose CA, US
Sudha Rathi - San Jose CA, US
Deenesh Padhi - Sunnyvale CA, US
Martin Jay Seamons - San Jose CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Bok Hoen Kim - San Jose CA, US
Amir Al-Bayati - San Jose CA, US
Derek R. Witty - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US
Anton Baryshnikov - San Jose CA, US
Chiu Chan - Foster City CA, US
Shuang Liu - Saratoga CA, US

International Classification:

H01L 21/683
H01L 21/66
G01R 27/02

US Classification:

361234, 438 17, 702 65

Abstract:

The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

US Patent:

20110159211, Jun 30, 2011

Filed:

Dec 21, 2010

Appl. No.:

12/974365

Inventors:

Dale R. Du Bois - Los Gatos CA, US
Mohamad A. Ayoub - Las Gatos CA, US
Robert Kim - Mountain View CA, US
Amit Bansal - Santa Clara CA, US
Mark Fodor - Los Gatos CA, US
Binh Nguyen - San Jose CA, US
Siu F. Cheng - Los Angeles CA, US
Hang Yu - Woodland CA, US
Chiu Chan - Foster City CA, US
Ganesh Balasubramanian - Sunnyvale CA, US
Deenesh Padhi - Sunnyvale CA, US
Juan Carlos Rocha - San Carlos CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C23C 16/00
B05C 11/00

US Classification:

427569, 118 71

Abstract:

Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

US Patent:

20110294303, Dec 1, 2011

Filed:

May 6, 2011

Appl. No.:

13/102846

Inventors:

Ramprakash Sankarakrishnan - San Jose CA, US
Ganesh Balasubramanian - Sunnyvale CA, US
Juan Carlos Rocha-Alvarez - San Carlos CA, US
Dale R. Du Bois - Los Gatos CA, US
Mark Fodor - Los Gatos CA, US
Jianhua Zhou - San Jose CA, US
Amit Bansal - Sunnyvale CA, US
Mohamad A. Ayoub - Las Gatos CA, US
Shahid Shaikh - Santa Clara CA, US
Patrick Reilly - Dublin CA, US
Deenesh Padhi - Sunnyvale CA, US
Thomas Nowak - Cupertino CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C23C 16/44
H01L 21/30
C23C 16/509

US Classification:

438758, 118723 E, 118504, 257E21211

Abstract:

An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

US Patent:

20120205046, Aug 16, 2012

Filed:

Apr 26, 2012

Appl. No.:

13/456308

Inventors:

Karthik Janakiraman - San Jose CA, US
Thomas Nowak - Cupertino CA, US
Juan Carlos Rocha-Alvarez - San Carlos CA, US
Mark A. Fodor - Los Gatos CA, US
Dale R. Du Bois - Los Gatos CA, US
Amit Bansal - Sunnyvale CA, US
Mohamad A. Ayoub - Los Gatos CA, US
Eller Y. Juco - San Jose CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Hichem M'Saad - Santa Clara CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/3065

US Classification:

15634534

Abstract:

An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

US Patent:

20120258259, Oct 11, 2012

Filed:

Apr 5, 2012

Appl. No.:

13/440720

Inventors:

Amit Bansal - Sunnyvale CA, US
Dale R. Du Bois - Los Gatos CA, US
Juan Carlos Rocha-Alvarez - San Carlos CA, US
Sanjeev Baluja - Campbell CA, US
Scott A. Hendrickson - Brentwood CA, US
Thomas Nowak - Cupertino CA, US

International Classification:

C23C 16/455
C23C 16/46
C23C 16/458

US Classification:

427558, 118723 R, 118719

Abstract:

Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

US Patent:

20080084650, Apr 10, 2008

Filed:

Oct 3, 2007

Appl. No.:

11/866646

Inventors:

Ganesh Balasubramanian - Sunnyvale CA, US
Amit Bansal - Santa Clara CA, US
Eller Juco - San Jose CA, US
Mohamad Ayoub - San Jose CA, US
Hyung-Joon Kim - Sunnyvale CA, US
Karthik Janakiraman - San Jose CA, US
Sudha Rathi - San Jose CA, US
Deenesh Padhi - Sunnyvale CA, US
Martin Seamons - San Jose CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Bok Kim - San Jose CA, US
Amir Al-Bayati - San Jose CA, US
Derek Witty - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US
Anton Baryshnikov - San Jose CA, US
Chiu Chan - Foster City CA, US
Shuang Liu - Saratoga CA, US

International Classification:

H01L 21/683

US Classification:

361234000

Abstract:

The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

US Patent:

20220384161, Dec 1, 2022

Filed:

May 25, 2021

Appl. No.:

17/330061

Inventors:

- Santa Clara CA, US
Ruiyun Huang - Santa Clara CA, US
Abdul Aziz Khaja - San Jose CA, US
Amit Bansal - Milpitas CA, US
Dong Hyung Lee - Danville CA, US
Ganesh Balasubramanian - Fremont CA, US
Tuan Anh Nguyen - San Jose CA, US
Sungwon Ha - Palo Alto CA, US
Anjana M. Patel - San Jose CA, US
Ratsamee Limdulpaiboon - San Jose CA, US
Karthik Janakiraman - San Jose CA, US
Kwangduk Douglas Lee - Redwood City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01J 37/32
B08B 7/00
C23C 14/56

Abstract:

Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.