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Alexander J Pepe

age ~63

from Austin, TX

Also known as:
  • Alex Pepe
  • John Pepe Alexander
  • Pepe Alexander
Phone and address:
1500 Palisades Pointe Ln, Austin, TX 78738
512 402-0878

Alexander Pepe Phones & Addresses

  • 1500 Palisades Pointe Ln, Austin, TX 78738 • 512 402-0878
  • 9503 Scenic Bluff Dr, Austin, TX 78733 • 512 263-1341
  • Lakewood, CO

Us Patents

  • Vertically Formed Neuron Transister Having A Floating Gate And A Control Gate

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  • US Patent:
    55833608, Dec 10, 1996
  • Filed:
    Aug 28, 1995
  • Appl. No.:
    8/520363
  • Inventors:
    Scott S. Roth - Austin TX
    William C. McFadden - Austin TX
    Alexander J. Pepe - Austin TX
  • Assignee:
    Motorola Inc. - Schaumburg IL
  • International Classification:
    H01L 27108
    H01L 2976
    H01L 29788
  • US Classification:
    257316
  • Abstract:
    A method for forming a vertical neuron MOSFET begins by providing a substrate (12). One or more conductive layers (24 and 28) are formed overlying the substrate (12). An opening (32) is formed through a portion of the conductive layers (24 and 28) to form one or more control electrodes from the conductive layers (24 and 28). A floating gate (36, and 38) is formed adjacent each of the control electrodes. A dielectric layer (34) is formed within the opening (32) and between the control electrodes and the floating gate (36, and 38) to provide for capacitive coupling between the control electrodes and the floating gate (36, and 38). The capacitive coupling may be altered for each control electrode via isotropic sidewall etching and other methods. By forming the neuron MOSFET in a vertical manner, a surface area of the neuron MOSFET is reduced when compared to known neuron MOSFET structures.
  • Method Of Forming A Transistor Having An Offset Channel Section

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  • US Patent:
    53745728, Dec 20, 1994
  • Filed:
    Jul 22, 1993
  • Appl. No.:
    8/095502
  • Inventors:
    Scott S. Roth - Austin TX
    William C. McFadden - Austin TX
    Alexander J. Pepe - Austin TX
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H01L 21265
  • US Classification:
    437 41
  • Abstract:
    The present invention includes a transistor having a channel region with a first and second section, wherein the sections have lengths that generally perpendicular to one another. The prevent invention also includes the transistor in an SRAM cell and processes for forming the transistor and the SRAM cell. In the embodiments that are described, the first section has a length that is generally vertical and the second section has a length that is generally extends in a lateral direction. The first section may be an undoped or lightly doped portion of a silicon plug. The plug may be formed including an etching or polishing step.
  • Method Of Making A Vertically Formed Neuron Transistor Having A Floating Gate And A Control Gate And A Method Of Formation

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  • US Patent:
    54808200, Jan 2, 1996
  • Filed:
    Apr 17, 1995
  • Appl. No.:
    8/425267
  • Inventors:
    Scott S. Roth - Austin TX
    William C. McFadden - Austin TX
    Alexander J. Pepe - Austin TX
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H01L 218247
  • US Classification:
    437 43
  • Abstract:
    A method for forming a vertical neuron MOSFET begins by providing a substrate (12). One or more conductive layers (24 and 28) are formed overlying the substrate (12). An opening (32) is formed through a portion of the conductive layers (24 and 28) to form one or more control electrodes from the conductive layers (24 and 28). A floating gate (36, and 38) is formed adjacent each of the control electrodes. A dielectric layer (34) is formed within the opening (32) and between the control electrodes and the floating gate (36, and 38) to provide for capacitive coupling between the control electrodes and the floating gate (36, and 38). The capacitive coupling may be altered for each control electrode via isotropic sidewall etching and other methods. By forming the neuron MOSFET in a vertical manner, a surface area of the neuron MOSFET is reduced when compared to known neuron MOSFET structures.
  • Transistor Having An Offset Channel Section

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  • US Patent:
    58148680, Sep 29, 1998
  • Filed:
    Sep 2, 1994
  • Appl. No.:
    8/298965
  • Inventors:
    Scott S. Roth - Austin TX
    William C. McFadden - Austin TX
    Alexander J. Pepe - Austin TX
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H01L 2976
    H01L 2994
    H01L 31062
    H01L 31113
  • US Classification:
    257393
  • Abstract:
    The present invention includes a transistor having a channel region with a first and second section, wherein the sections have lengths that generally perpendicular to one another. The prevent invention also includes the transistor in an SRAM cell and processes for forming the transistor and the SRAM cell. In the embodiments that are described, the first section has a length that is generally vertical and the second section has a length that is generally extends in a lateral direction. The first section may be an undoped or lightly doped portion of a silicon plug. The plug may be formed including an etching or polishing step.
Name / Title
Company / Classification
Phones & Addresses
Alexander John Pepe
Director, Manager
AKP REAL ESTATE HOLDINGS, LLC
1500 Palisades Pointe Ln, Austin, TX 78738
Alexander J Pepe
Governing, Governing Person
AJP CONSULTING, LLC
Business Consulting Services
1500 Palisades Pointe Ln, Austin, TX 78738
Alexander Pepe
Svp Global Front-end Operations And Procurement
Freescale Semiconductor, Ltd
Mfg Semiconductors/Related Devices
6501 W William Cannon Dr, Austin, TX 78735
Alexander J Pepe
Senior Vic, Director, President
ANUE SYSTEMS, INC
Manufactures Measuring and Controlling Devices · Mfg Measuring/Controlling Devices · Business Services · Electrician · Measuring and Controlling Devices, NEC
8310 N Capital Of Texas Hwy, Austin, TX 78731
9111 Jollyville Rd, Austin, TX 78759
512 600-5400, 512 527-0453, 512 527-0453
Alexander John Pepe
Governing, Governing Person
AKP ASSET MANAGEMENT, LLC
1500 Palisades Pointe Ln, Austin, TX 78738
1500 Palisades Pt Ln, Austin, TX 78738

Youtube

Jose Alexander Pepe Atacante - Comunitario

Fecha de Nacimiento: 20/04/1993 Nacionalidad: Venezuela - Italia Conct...

  • Category:
    Sports
  • Uploaded:
    17 Nov, 2012
  • Duration:
    9m 40s

Am Limit (Trailer)

Thomas und Alexander Huber sind Brder, teilen die Leidenschaft frs ext...

  • Category:
    Film & Animation
  • Uploaded:
    30 Jan, 2011
  • Duration:
    1m 29s

Alexander Fog - Spicy Morning Love EP [Once A...

Alexander Fog is without a doubt one of the most exciting new producer...

  • Category:
    Music
  • Uploaded:
    22 Jan, 2012
  • Duration:
    6m 26s

Barcelona Manchester United 2-0 Pepe Guardiol...

  • Category:
    Sports
  • Uploaded:
    28 May, 2009
  • Duration:
    1m 16s

CrossTalk: Ready, Steady, Decline! (ft. Pepe ...

Are the days of Western supremacy coming to an end? Has the financial ...

  • Category:
    News & Politics
  • Uploaded:
    07 Dec, 2012
  • Duration:
    23m 34s

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Alexander Pepe Castillo ...

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Alexander Pepe Castillo (Chicago, IL)
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Pepe Alexander Pato

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Young Pepe Alexander Will...

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Alexander Pepe

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Cale Lacasse, Paige Kelly Russo, Kyle Pallanck, Jamie Blais, Brian Fitzpatrick
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Alexander Pepe Lopez

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