Alan Benjamin Colwell

US Patent:

20060231016, Oct 19, 2006

Filed:

Jun 19, 2006

Appl. No.:

11/471106

Inventors:

Eric Blomiley - Boise ID, US
Nirmal Ramaswamy - Boise ID, US
Ross Dando - Nampa ID, US
Joel Drewes - Boise ID, US
Alan Colwell - Boise ID, US
Eduardo Tovar - Caldwell ID, US

International Classification:

C30B 23/00
C30B 25/00
C30B 28/12
C30B 28/14

US Classification:

117092000

Abstract:

The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.

US Patent:

20070012241, Jan 18, 2007

Filed:

Sep 22, 2006

Appl. No.:

11/525666

Inventors:

Eric Blomiley - Boise ID, US
Nirmal Ramaswamy - Boise ID, US
Ross Dando - Nampa ID, US
Joel Drewes - Boise ID, US
Alan Colwell - Boise ID, US
Eduardo Tovar - Caldwell ID, US

International Classification:

C30B 23/00
C30B 25/00
C30B 28/12
C30B 28/14

US Classification:

117089000

Abstract:

The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.

US Patent:

20050223985, Oct 13, 2005

Filed:

Apr 8, 2004

Appl. No.:

10/822208

Inventors:

Eric Blomiley - Boise ID, US
Nirmal Ramaswamy - Boise ID, US
Ross Dando - Nampa ID, US
Joel Drewes - Boise ID, US
Alan Colwell - Boise ID, US
Eduardo Tovar - Caldwell ID, US

International Classification:

C23C016/00
H01L021/66

US Classification:

118715000, 438014000, 118725000, 118666000

Abstract:

The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.